Hydrogen Treatment-Induced Interface State Optimization in Ni/Au (001) β -Ga 2 O 3 Schottky Barrier Diode

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Abstract
This study investigates the impact of hydrogen treatment on the electrical performance and interface states of Ni/Au (001) $\beta $ -Ga2O3 Schottky barrier diode (SBD). Experimental results show that after 168 h of hydrogen treatment at $100~^{\circ }$ C, the Schottky barrier height ( $\Phi _{{B}}\text {)}$ decreases from 1.09 to 1.03 eV, the ideality factor ( ${n}\text {)}$ decreases from 1.14 to 1.07, and the forward current density ( ${J}_{{F}}\text {)}$ increases by 20.2%. These performance improvements are attributed to hydrogen-induced passivation of interface traps, as demonstrated by low-frequency noise (LFN) and frequency-dependent conductance analysis. In addition, secondary ion mass spectrometry (SIMS) results reveal a significant increase in hydrogen concentration at the Ni/Ga2O3 interface after hydrogen treatment. Hydrogen atoms react with unsaturated chemical bonds, forming stable covalent bond structures through electron pair sharing, thereby reducing the trap state density and trap activation energy. These findings provide valuable insights into hydrogen treatment as an effective method for optimizing the electrical performance of $\beta $ -Ga2O3 SBD.
Funding Information
  • Guangdong Basic and Applied Basic Research Foundation (2022A1515111049)
  • National Natural Science Foundation of China (12305299)
  • Xinjiang Uygur Autonomous Region 2023 through Tianchi YingCai Program (2024000057)
  • National Key Laboratory of Wide Bandgap Semiconductor Materials and Devices Open Fund (2413S101)

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