Characterization and Modeling of Temperature Effects in 3-D NAND Flash Arrays—Part I: Polysilicon-Induced Variability

Authors:

5 June 2018

journal article
research article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 65 (8) , 3199-3206
DOI:10.1109/ted.2018.2838524

Abstract

This paper presents characterization and modeling results exploring the temperature dependence of the electrical characteristics of 3-D NAND Flash strings. Experimental data over a wide temperature range are used to calibrate a Technology Computer-Aided Design model for current transport through the polysilicon channel of the strings, which is then used to investigate the role of grain boundaries on string conduction. Results reveal that the variability in the grain configuration in the strings introduces a nonnegligible statistical spread in the temperature dependence of the threshold voltage (VT) of the memory cells, which acts as a broadening contribution to the array VT distribution when temperature is changed. The experimental and modeling activities will be extended in Part II of this paper to explore the temperature dependence of the VT instability caused by random telegraph noise.

Keywords

This publication has 27 references indexed in Scilit:

Temperature activation of the string current and its variability in 3-D NAND flash arrays
2017
Analysis of the Meyer-Neldel Rule Based on a Temperature-Dependent Model for Thin-Film Transistors
IEEE Transactions on Electron Devices, 2016
Polycrystalline-silicon channel trap induced transient read instability in a 3D NAND flash cell string
2016
Analysis of Random Telegraph Noise and low frequency noise properties in 3-d stacked NAND flash memory with tube-type poly-Si channel structure
2012
Random Telegraph Noise Effect on the Programmed Threshold-Voltage Distribution of Flash Memories
IEEE Electron Device Letters, 2009
Comprehensive Analysis of Random Telegraph Noise Instability and Its Scaling in Deca–Nanometer Flash Memories
IEEE Transactions on Electron Devices, 2009
Investigation of the Random Telegraph Noise Instability in Scaled Flash Memory Arrays
Japanese Journal of Applied Physics, 2008
On the Conduction Mechanism in Polycrystalline Silicon Thin-Film Transistors
IEEE Transactions on Electron Devices, 2004
Analysis of electrical characteristics of polycrystalline silicon thin-film transistors under static and dynamic conditions
Solid-State Electronics, 1997
On the pseudo-subthreshold characteristics of polycrystalline-silicon thin-film transistors with large grain size
IEEE Electron Device Letters, 1993