Remote Epitaxy: Fundamentals, Challenges, and Opportunities
- 4 March 2024
- journal article
- review article
- Published by American Chemical Society (ACS) in Nano Letters
- Vol. 24 (10) , 2939-2952
Abstract
Advanced heterogeneous integration technologies are pivotal for next-generation electronics. Single-crystalline materials are one of the key building blocks for heterogeneous integration, although it is challenging to produce and integrate these materials. Remote epitaxy is recently introduced as a solution for growing single-crystalline thin films that can be exfoliated from host wafers and then transferred onto foreign platforms. This technology has quickly gained attention, as it can be applied to a wide variety of materials and can realize new functionalities and novel application platforms. Nevertheless, remote epitaxy is a delicate process, and thus, successful execution of remote epitaxy is often challenging. Here, we elucidate the mechanisms of remote epitaxy, summarize recent breakthroughs, and discuss the challenges and solutions in the remote epitaxy of various material systems. We also provide a vision for the future of remote epitaxy for studying fundamental materials science, as well as for functional applications.Keywords
Funding Information
- Korea Health Industry Development Institute (HI19C1348)
- U.S. Department of War (D19AP00037-07)
- National Research Foundation of Korea (2021M3H4A1A02056037)
- U.S. Department of War (FA9550-22-1-0024)
- Korea Institute for Advancement of Technology (P0017305)
- National Science Foundation (ECCS-2328839)
- U.S. Department of Energy (DE-EE0008558)
- National Science Foundation (DMR-2240994)
This publication has 61 references indexed in Scilit:
- Remote heteroepitaxy of transition metal dichalcogenides through monolayer hexagonal boron nitrideNano Research, 2023
- Principles for 2D‐Material‐Assisted Nitrides Epitaxial GrowthAdvanced Materials, 2023
- Recent Advances in Mechanically Transferable III‐Nitride Based on 2D Buffer StrategyAdvanced Functional Materials, 2023
- Thru‐Hole Epitaxy: A Highway for Controllable and Transferable Epitaxial GrowthAdvanced Materials Interfaces, 2022
- Graphene‐Assisted Epitaxy of High‐Quality GaN Films on GaN TemplatesAdvanced Optical Materials, 2022
- Graphene Buffer Layer on SiC as a Release Layer for High-Quality Freestanding Semiconductor MembranesNano Letters, 2021
- Quasi van der Waals epitaxy nitride materials and devices on two dimension materialsNano Energy, 2020
- Influence of Temperature‐Dependent Substrate Decomposition on Graphene for Separable GaN GrowthAdvanced Materials Interfaces, 2019
- Improved Epitaxy of AlN Film for Deep‐Ultraviolet Light‐Emitting Diodes Enabled by GrapheneAdvanced Materials, 2019
- An overview of through-silicon-via technology and manufacturing challengesMicroelectronic Engineering, 2015