A 16.7-dBm 245-to-295-GHz Power Amplifier With a Four-Way Power Combiner in 0.13-μm SiGe
- 26 May 2025
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Wireless Technology Letters
- Vol. 35 (9) , 1348-1351
Abstract
This letter presents the design and experimental characterization of a power amplifier (PA) (245–295 GHz) with power added efficiency (PAE) of 4.54% and saturated output power of 16.7 dBm using 0.13- $\mu $ m silicon-germanium (SiGe) technology. The realized two-stage PA differential cascode cells are combined by a four-way transmission lines (T-lines)-based combiner with 1.16 dB of loss. The size of the overall chip is 1.09mm2 including the pads and baluns. The presented PA achieves 2 dB higher saturated output power and 1.39% higher PAE than the state-of-the-art silicon-based PAs.Keywords
Funding Information
- German Research Foundation (DFG) within the Collaborative Research Center “SFB 1527 High Performance Compact Magnetic Resonance
This publication has 7 references indexed in Scilit:
- 220-GHz High-Efficiency Power Amplifiers in 250-nm and 130-nm InP HBT Technologies Having 14.4-25.0% PAE and 40-60 mW $\mathrm{P}_{\text{out}}$2024
- 305-GHz Cascode Power Amplifier Using Capacitive Feedback Fabricated Using SiGe HBT's with fmax of 450 GHz2023
- A 211-to-263-GHz Dual-LC-Tank-Based Broadband Power Amplifier With 14.7-dBm P SAT and 16.4-dB Peak Gain in 130-nm SiGe BiCMOSIEEE Journal of Solid-State Circuits, 2022
- 220–320-GHz J-Band 4-Way Power Amplifier in Advanced 130-nm BiCMOS TechnologyIEEE Microwave and Wireless Components Letters, 2022
- A compact H-band Power Amplifier with High Output Power2021
- A 13.5-dBm 200–255-GHz 4-Way Power Amplifier and Frequency Source in 130-nm BiCMOSIEEE Solid-State Circuits Letters, 2019
- A Precision SiGe Reference Circuit Utilizing Si and SiGe Bandgap Voltage DifferencesIEEE Transactions on Electron Devices, 2017