A Dual-Band Millimeter-Wave Direct-Conversion Transmitter With Quadrature Error Correction
Authors:
- 22 October 2014
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 62 (12) , 3118-3130
Abstract
The analysis and implementation of a dual-band direct-conversion millimeter-wave transmitter is presented. The proposed dual-band modulator uses high-impedance loads at two frequencies for the local oscillator driving amplifiers and power amplifier (PA) pre-amplifiers. To correct the amplitude and phase imbalance of the in-phase and quadrature channels at Q- and W-bands, the paper suggests a digitally controlled quadrature error correction stage to finely calibrate these errors and lower the error vector magnitude (EVM) without increasing the baseband digital-to-analog converter resolution. The transmitter is fabricated in 0.12- μm silicon-germanium BiCMOS process and occupies an area of 5.5 mm 2 . At 45-GHz carrier frequency, error correction improves the sideband suppression ratio (SSR) by 10 dB at 2.4-MHz IF frequency. The EVM is lowered from 3.21% to 2.38% for a 64-QAM constellation at a 2.4-Ms/s symbol rate. At 94-GHz carrier frequency, the SSR is improved from 24 to 41 dBc at 2.4-MHz IF frequency, and the EVM is lowered by more than 1% for a 16-QAM constellation at 3-Ms/s symbol rate. A dual-band PA breakout measurement indicates the peak power-added efficiency of 15% with 14-dBm maximum saturated power (Psat) at 43 GHz and 9-dBm Psat at 82 GHz is achieved.Keywords
This publication has 16 references indexed in Scilit:
- V-Band High Data-Rate I/Q Modulator and Demodulator With a Power-Locked Loop LO Source in 0.15-/spl mu/m GaAs pHEMT TechnologyIEEE Transactions on Microwave Theory and Techniques, 2013
- Linearity Considerations for Low-EVM, Millimeter-Wave Direct-Conversion ModulatorsIEEE Transactions on Microwave Theory and Techniques, 2012
- 135 GHz 98 mW 10 Gbps ASK transmitter and receiver chipset in 40 nm CMOS2012
- A 9 mW, Q-Band Direct-Conversion I/Q Modulator in SiGe BiCMOS ProcessIEEE Microwave and Wireless Components Letters, 2012
- A 45-GHz SiGe HBT amplifier at greater than 25 % efficiency and 30 mW output power2011
- Reliability of SiGe HBTs for Power Amplifiers—Part I: Large-Signal RF Performance and Operating LimitsIEEE Transactions on Device and Materials Reliability, 2009
- A CMOS quadrature down-conversion mixer with analog I/Q correction obtaining 55 dB of image rejection for TV on Mobile applications2006
- A 60-GHz-band Compact IQ Modulator MMIC for Ultra-high-speed Wireless Communication2006
- Baseband digital predistorter with quadrature error correction2005
- An accurate statistical yield model for CMOS current-steering D/A converters2002