Demonstration of β-Ga 2 O 3 MEMS resonators fabricated by crystallographic gas etching of (001) β-Ga 2 O 3 substrates
Open Access
- 1 November 2026
- journal article
- Published by IOP Publishing in Applied Physics Express
- Vol. 19 (11) , 116501
Abstract
We report the first resonance characterization of β-Ga 2 O 3 -based doubly-clamped-beam resonators elongated along [100] and fabricated directly on a (001) β-Ga 2 O 3 substrate by crystallographic gas etching. The beams exhibited clear fundamental-mode resonances with quality factors ( Q ) on the order of 10 4 . Analysis of the beam-length dependence of the resonant frequency ( f 0 ) yielded an effective Young’s modulus of 143.2 (+16.4/−14.0) GPa within the Euler–Bernoulli beam approximation, while axial-stress analysis indicated only a small residual tensile stress. The f 0 Q values exceeded the highest reported values for transferred-flake-based doubly clamped beams, highlighting the potential advantage of crystallographic etching for fabricating β-Ga 2 O 3 microelectromechanical systems.Keywords
Funding Information
- Japan Society for the Promotion of Science (JP24H00287)
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