Radiation hardness of β-Ga2O3 metal-oxide-semiconductor field-effect transistors against gamma-ray irradiation
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- 8 January 2018
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 112 (2) , 023503
Abstract
The effects of ionizing radiation on β-Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs) were investigated. A gamma-ray tolerance as high as 1.6 MGy(SiO2) was demonstrated for the bulk Ga2O3 channel by virtue of weak radiation effects on the MOSFETs' output current and threshold voltage. The MOSFETs remained functional with insignificant hysteresis in their transfer characteristics after exposure to the maximum cumulative dose. Despite the intrinsic radiation hardness of Ga2O3, radiation-induced gate leakage and drain current dispersion ascribed respectively to dielectric damage and interface charge trapping were found to limit the overall radiation hardness of these devices.Keywords
Funding Information
- Cross-Ministerial Strategic Innovation Promotion Program
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