Elimination of the Parasitic Metal Resistance in Transmission Line Model for Extraction of Ultralow Specific Contact Resistivity

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Abstract
A metal-resistance-aware transmission line model (MRA-TLM) is developed to eliminate the parasitic metal resistance from the extraction of specific contact resistivity ρc in the metal/semiconductor contact. The proposed MRA-TLM is verified by Synopsys technology computer-aided design (TCAD) simulation, and a superior extraction accuracy as compared to the conventional TLM-based method is achieved. The proposed MRA-TLM is experimentally demonstrated in the metal/p⁺-Ge0.95n0.05 (p⁺-GeSn) contacts. Ultralow ρc values of 7.5 x 10⁻¹⁰ and 2.1 x 10⁻⁹ Ω · cm² are extracted by MRA-TLM for Ni/p⁺-GeSn and Ti/p⁺-GeSn contacts, respectively, which are in good agreement with 9.5 x 10⁻¹⁰ and 2.6 x 10⁻⁹ Ω · cm² extracted numerically by the two-layer distributed-resistor-network model (TDM), qualifying the proposed MRA-TLM for the extraction of ultralow ρ c down to sub-10⁻⁹ Ω · cm² regime. In contrast, the ρc extracted by the conventional TLM-based method is more than three times higher due to the parasitic metal resistance.
Funding Information
  • Ministry of Education (MOE) Academic Research Fund (MOE2018-T2-1-137)
  • National University of Singapore (R-263-000-B43-733)

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