Investigation of Transient Two-Stage Thermal Equivalent RC Network of SOI-MOSFETs Using Nano Double-Pulse Measurement
- 5 September 2022
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 69 (10) , 5430-5436
Abstract
The self-heating effect (SHE) of silicon-on-insulator (SOI) MOSFETs brings challenges to the measurement and modeling of transient electrothermal characteristics. For the first time, this study obtains the transient two-stage thermal equivalent RC network of SOI MOSFETs by nano double-pulse measurement combined with network identification by a deconvolution (NID) method. The two-stage model provides a comprehensive reference for the accumulation of residual heat under dynamic operation. We reveal that since the oxide layer acts as a thermal reservoir, the heat dissipation process can be divided into three phases according to thermal time constants. The results of geometry dependence of thermal parameters show that the gate length and width-to-length ratio ( ${W}/{L}$ ) increase: the thermal resistance trend of both stages decreases, the one-stage thermal time constant increases, but the two-stage thermal time constant decreases. Also, as the scaling of device dimension and mutual thermal coupling, the thermal transient response boosts significantly.Keywords
Funding Information
- Fund of Innovation Center of Radiation Application (KFZC2020020101)
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