Selective Growth of Cubic GaN in Small Areas on Patterned GaAs(100) Substrates by Metalorganic Vapor Phase Epitaxy
Authors:
- Masaki NagaharaMNMasaki Nagahara
- Seiro MiyoshiSMSeiro Miyoshi
- Hiroyuki YaguchiHYHiroyuki Yaguchi
- Kentaro OnabeKOKentaro Onabe
- Yasuhiro ShirakiYSYasuhiro Shiraki
- Ryoichi ItoRIRyoichi Ito
- 1 January 1994
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 33 (1S) , 694-697
Abstract
The metalorganic vapor phase epitaxy growth of cubic GaN in small areas on SiO2-patterned GaAs substrates has been performed. We have succeeded in selective growth without deposition on the SiO2 mask at temperatures between 620 and 675° C. The crystal quality of cubic GaN has been improved through growth in small areas on patterned GaAs substrates. It is found that the grain size becomes larger and the full width at half maximum of the X-ray diffraction peak of cubic GaN becomes narrower on patterned substrates than on unpatterned ones.Keywords
This publication has 11 references indexed in Scilit:
- Polycrystalline GaAs Made by Selective Deposition and Its Optical PropertiesJapanese Journal of Applied Physics, 1992
- MOVPE growth of cubic GaN on GaAs using dimethylhydrazineJournal of Crystal Growth, 1992
- GaN, AlN, and InN: A reviewJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 1992
- Structure Control of GaN Films Grown on (001) GaAs Substrates by GaAs Surface PretreatmentsJapanese Journal of Applied Physics, 1991
- Epitaxial growth of cubic and hexagonal GaN on GaAs by gas-source molecular-beam epitaxyApplied Physics Letters, 1991
- Epitaxial growth of zinc blende and wurtzitic gallium nitride thin films on (001) siliconApplied Physics Letters, 1991
- An investigation of the properties of cubic GaN grown on GaAs by plasma-assisted molecular-beam epitaxyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 1991
- Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−AlN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPEJournal of Crystal Growth, 1989
- Growth of cubic phase gallium nitride by modified molecular-beam epitaxyJournal of Vacuum Science & Technology A, 1989
- Low Temperature Growth of GaN and AlN on GaAs Utilizing Metalorganics and HydrazineJapanese Journal of Applied Physics, 1986