Assessment of wide frequency range admittance properties of Au/(ZnO:CeO2:PVP)/n-Si Schottky diodes
- 28 October 2025
- journal article
- research article
- Published by Springer Nature in Journal of Materials Science: Materials in Electronics
- Vol. 36 (30) , 1-14
Abstract
No abstract availableKeywords
This publication has 41 references indexed in Scilit:
- Surface states and series resistance effects in Au/(HgS-PVA)/n-Si capacitorsJournal of Materials Science: Materials in Electronics, 2025
- A detailed analysis of electrical parameters and energy dependence of interface Traps in Au-(Co:PVA)-nSi-Al structure via impedance measurementsJournal of Materials Science: Materials in Electronics, 2025
- Investigation of dielectric and electric modulus properties of Al/p-Si structures with pure, 3%, and 5% (graphene:PVA) by impedance spectroscopyJournal of Materials Science: Materials in Electronics, 2024
- Frequency-dependent physical parameters, the voltage-dependent profile of surface traps, and their lifetime of Au/(ZnCdS-GO:PVP)/n-Si structures by using the conductance methodJournal of Materials Science: Materials in Electronics, 2024
- Electrical Characterization of Semiconductors: I–V, C–V and Hall Measurements2023
- Variation of electrical and dielectric characteristics of Schottky diodes (SDs) depending on the existence of PVC and carbon-nanotube (CNT)-doped PVC interlayersJournal of Materials Science: Materials in Electronics, 2023
- The evaluation of the current–voltage and capacitance–voltage-frequency measurements of Yb/p-Si Schottky diodes with a high zero-bias barrier heightApplied Physics A, 2020
- The role of interface traps, series resistance and (Ni-doped PVA) interlayer effects on electrical characteristics in Al/p-Si (MS) structuresJournal of Materials Science: Materials in Electronics, 2019
- The investigation of effects of (Fe2O4-PVP) organic-layer, surface states, and series resistance on the electrical characteristics and the sources of themJournal of Materials Science: Materials in Electronics, 2019
- The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance TechniqueBell System Technical Journal, 1967