Yashar Azizian-Kalandaragh
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Previous Organizations / Institutes
The organizations / institutes from the scholar's other articles in the past ten years
Research Subjects
Yashar Azizian-Kalandaragh has a total of 97 co-authors. Here are the top co-authors by number of shared publications:
Şemsettin Altındal
Department of Physics, Faculty of Sciences, Gazi University, Ankara, Türkiye
17 shared publicationsGholamreza Pirgholi-Givi
Department of Physics, Technical and Vocational University (TVU), Tehran, Iran
11 shared publications- Ali Barkhordari
Faculty of Physics Shahid Bahonar University of Kerman Kerman 76131 Iran
10 shared publications Süleyman Özçelik
Department of Photonics, Faculty of Applied Sciences, Gazi University, Ankara, Türkiye
10 shared publications- Şemsettin Altındal
Department of Physics, Faculty of Sciences, Gazi University, Ankara, Turkey
6 shared publications Hamid Reza Mashayekhi
Faculty of Physics, Shahid Bahonar University of Kerman, Kerman, Iran
5 shared publications
Latest Publications
- 19 May 2026
- Published by World Scientific Pub Co Pte Ltd in International Journal of Modern Physics B
Engineering the interface of Schottky diodes with a PVA:(CoFe 2 O 4 -rGO) nanocomposite for enhanced frequency response via admittance spectroscopy
This study examines the frequency- and voltage-dependent electrical parameters, interface trap densities ([ ]) and relaxation times ([ ]) in Au/PVA:(CoFe 2 O 4 -rGO)/n-Si structures using three complementary admittance methods. CoFe 2 O 4 nanoparticles, synthesized hydrothermally, were incorporated with reduced graphene oxide (rGO) into polyvinyl alcohol (PVA) matrices and spin-coated onto n-Si substrates to form interfacial layers. Capacitance–voltage (C–V) and conductance–voltage (G/[ ]–V) measurements spanned [ ]2.0–[ ]3.0[ ]V across 0.3[ ]kHz–3[ ]MHz. Pronounced frequency dispersion was observed: forward-bias capacitance at [ ]3.0[ ]V fell from [ ]9[ ]nF (0.3[ ]kHz) to [ ]2.5[ ]nF (3[ ]MHz), while the normalized conductance peaked near 0.8–1.0[ ]V at all frequencies, with trap saturation above [ ]0.75[ ]V. Hill–Coleman analysis revealed [ ] values that decline quasi-exponentially from [ ] [ ]eV[ ] [ ]cm[ ] at low frequencies to [ ] [ ]eV[ ] [ ]cm[ ] at high frequencies. Parallel-conductance extraction revealed [ ] spanning three orders of magnitude, from [ ]120[ ] [ ]s at 0.20[ ]V to [ ]0.08[ ] [ ]s at 1.60[ ]V, with the normalized conductance saturating above [ ]0.75[ ]V, consistent with strong field-induced acceleration of trap dynamics and near-complete filling of accessible trap levels under moderate forward bias. This behavior arises because the AC period shortens relative to [ ]: once the period falls below the trap response time, slower states cease contributing to the measured admittance. The apparent donor concentration decreased from [ ] [ ]cm[ ] to [ ] [ ]cm[ ] over the same frequency range, while the depletion width expanded from [ ]6.6[ ][ ]m to [ ]39.9[ ][ ]m, and the peak electric field diminished from [ ] [ ]V/cm to [ ] [ ]V/cm over the same frequency. Unlike conventional low-dielectric interlayers that cannot fully suppress interface states or reduce series resistance, the high-dielectric PVA:(CoFe 2 O 4 -rGO) nanocomposite studied here offers a broader operating window by neutralizing a substantial fraction of [ ] while regulating charge transport mechanisms. To our knowledge, this is the first frequency-resolved, multi-method mapping of [ ] and [ ] distributions in such a system, offering practical guidance for engineering nanocomposite interlayers with tailored trap spectra.
- 19 May 2026
- Published by World Scientific Pub Co Pte Ltd in International Journal of Modern Physics B
Engineering the interface of Schottky diodes with a PVA:(CoFe 2 O 4 -rGO) nanocomposite for enhanced frequency response via admittance spectroscopy
This study examines the frequency- and voltage-dependent electrical parameters, interface trap densities ([ ]) and relaxation times ([ ]) in Au/PVA:(CoFe 2 O 4 -rGO)/n-Si structures using three complementary admittance methods. CoFe 2 O 4 nanoparticles, synthesized hydrothermally, were incorporated with reduced graphene oxide (rGO) into polyvinyl alcohol (PVA) matrices and spin-coated onto n-Si substrates to form interfacial layers. Capacitance–voltage (C–V) and conductance–voltage (G/[ ]–V) measurements spanned [ ]2.0–[ ]3.0[ ]V across 0.3[ ]kHz–3[ ]MHz. Pronounced frequency dispersion was observed: forward-bias capacitance at [ ]3.0[ ]V fell from [ ]9[ ]nF (0.3[ ]kHz) to [ ]2.5[ ]nF (3[ ]MHz), while the normalized conductance peaked near 0.8–1.0[ ]V at all frequencies, with trap saturation above [ ]0.75[ ]V. Hill–Coleman analysis revealed [ ] values that decline quasi-exponentially from [ ] [ ]eV[ ] [ ]cm[ ] at low frequencies to [ ] [ ]eV[ ] [ ]cm[ ] at high frequencies. Parallel-conductance extraction revealed [ ] spanning three orders of magnitude, from [ ]120[ ] [ ]s at 0.20[ ]V to [ ]0.08[ ] [ ]s at 1.60[ ]V, with the normalized conductance saturating above [ ]0.75[ ]V, consistent with strong field-induced acceleration of trap dynamics and near-complete filling of accessible trap levels under moderate forward bias. This behavior arises because the AC period shortens relative to [ ]: once the period falls below the trap response time, slower states cease contributing to the measured admittance. The apparent donor concentration decreased from [ ] [ ]cm[ ] to [ ] [ ]cm[ ] over the same frequency range, while the depletion width expanded from [ ]6.6[ ][ ]m to [ ]39.9[ ][ ]m, and the peak electric field diminished from [ ] [ ]V/cm to [ ] [ ]V/cm over the same frequency. Unlike conventional low-dielectric interlayers that cannot fully suppress interface states or reduce series resistance, the high-dielectric PVA:(CoFe 2 O 4 -rGO) nanocomposite studied here offers a broader operating window by neutralizing a substantial fraction of [ ] while regulating charge transport mechanisms. To our knowledge, this is the first frequency-resolved, multi-method mapping of [ ] and [ ] distributions in such a system, offering practical guidance for engineering nanocomposite interlayers with tailored trap spectra.
- 4 March 2026
- Published by Optica Publishing Group in Applied Optics
- Vol. 65 (8) , 2652-2660
Fabrication of diffractive optical elements using aerosol jet printing technology
We present a maskless method for fabricating transmission-type diffractive optical elements (DOEs) using aerosol jet printing (AJP). To our knowledge, this work represents a systematic proof-of-concept demonstration of AJP for DOE fabrication. Five distinct geometries were directly printed from CAD designs without masks or cleanroom facilities. Structural characterization using atomic force microscopy (AFM), optical microscopy, profilometry, and XRD confirmed high pattern fidelity. Optical performance under coherent laser illumination showed good qualitative agreement with FFT-based simulations. This approach provides a rapid, cost-effective (<$5persample), and environmentally friendly prototyping method that complements conventional lithography for passive diffractive components.
- 4 March 2026
- Published by Optica Publishing Group in Applied Optics
- Vol. 65 (8) , 2652-2660
Fabrication of diffractive optical elements using aerosol jet printing technology
We present a maskless method for fabricating transmission-type diffractive optical elements (DOEs) using aerosol jet printing (AJP). To our knowledge, this work represents a systematic proof-of-concept demonstration of AJP for DOE fabrication. Five distinct geometries were directly printed from CAD designs without masks or cleanroom facilities. Structural characterization using atomic force microscopy (AFM), optical microscopy, profilometry, and XRD confirmed high pattern fidelity. Optical performance under coherent laser illumination showed good qualitative agreement with FFT-based simulations. This approach provides a rapid, cost-effective (<$5persample), and environmentally friendly prototyping method that complements conventional lithography for passive diffractive components.
- 27 January 2026
- Published by Springer Nature in Journal of Materials Science: Materials in Electronics
- Vol. 37 (3) , 267
The use of PVP polymer and PVP:Gd2O3 nanocomposite interlayers to improve electrical features of Schottky barrier diodes
- 27 January 2026
- Published by Springer Nature in Journal of Materials Science: Materials in Electronics
- Vol. 37 (3) , 267
The use of PVP polymer and PVP:Gd2O3 nanocomposite interlayers to improve electrical features of Schottky barrier diodes
- 18 December 2025
- Published by Springer Nature in Optical and Quantum Electronics
- Vol. 58 (1) , 42
Quantitative assessment of the self-healing phenomenon in Hermite–Gauss beams using intensity- and amplitude-based similarity metrics
- 18 December 2025
- Published by Springer Nature in Optical and Quantum Electronics
- Vol. 58 (1) , 42
Quantitative assessment of the self-healing phenomenon in Hermite–Gauss beams using intensity- and amplitude-based similarity metrics
- 28 October 2025
- Published by Springer Nature in Journal of Materials Science: Materials in Electronics
- Vol. 36 (30) , 1-14
Assessment of wide frequency range admittance properties of Au/(ZnO:CeO2:PVP)/n-Si Schottky diodes
- 28 October 2025
- Published by Springer Nature in Journal of Materials Science: Materials in Electronics
- Vol. 36 (30) , 1-14
Assessment of wide frequency range admittance properties of Au/(ZnO:CeO2:PVP)/n-Si Schottky diodes
- 24 August 2025
- Published by Springer Nature in Journal of Materials Science: Materials in Electronics
- Vol. 36 (24) , 1-12
Characterization of Au/PVA:Gd2O3/n-Si Schottky structure in dark and under illumination
- 24 August 2025
- Published by Springer Nature in Journal of Materials Science: Materials in Electronics
- Vol. 36 (24) , 1-12
Characterization of Au/PVA:Gd2O3/n-Si Schottky structure in dark and under illumination
- 8 July 2025
- Published by Springer Nature in Applied Physics A
- Vol. 131 (8) , 1-12
Dielectric characterization of the Al/p-Si structure with porous silicon wafer
- 8 July 2025
- Published by Springer Nature in Applied Physics A
- Vol. 131 (8) , 1-12
Dielectric characterization of the Al/p-Si structure with porous silicon wafer
- 17 June 2025
- Published by Springer Nature in Journal of Materials Science: Materials in Electronics
- Vol. 36 (17) , 1-15
Optimizing Schottky barrier diodes: the role of PVC and PVC: molybdenum interlayers in electrophysical properties
- 17 June 2025
- Published by Springer Nature in Journal of Materials Science: Materials in Electronics
- Vol. 36 (17) , 1-15
Optimizing Schottky barrier diodes: the role of PVC and PVC: molybdenum interlayers in electrophysical properties
- 17 May 2025
- Published by Springer Nature in Journal of Materials Science: Materials in Electronics
- Vol. 36 (14) , 1-18
Efficient photodegradation of methylene blue by CdS-based nanocomposites
- 17 May 2025
- Published by Springer Nature in Journal of Materials Science: Materials in Electronics
- Vol. 36 (14) , 1-18
Efficient photodegradation of methylene blue by CdS-based nanocomposites