Cerium Oxide Slurries in CMP. Electrophoretic Mobility and Adsorption Investigations of Ceria/Silicate Interaction
Authors:
- 1 January 2004
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 151 (10) , G658-G662
Abstract
The interaction between ceria particles and silicate ions was studied in order to further understand the mechanism of chemical-mechanical polishing (CMP) of silicon-based materials. Electrophoretic mobility (zeta potential) and adsorption measurements were the techniques utilized. In the presence of silicate ions, the zeta potential of ceria particles changed from positive to negative; in addition, the isoelectric point IEP of the particles shifted to lower pH values with increasing silicate addition. The adsorption density of silicate ions on ceria was found to increase as the concentration of silicate ions in the system increased. Also, with increase in pH, silicate adsorption went through a maximum at about pH 9, then decreased rapidly at higher pH values. The adsorption and zeta potential results are rationalized by considering the solution chemistry of the dissolved silicate species, the protonation/deprotonation of ceria surface, and the accompanying surface complexation reactions. These experimental observations demonstrate a strong interaction between ceria particles and silicate ions. The implication is that adsorption of silicate ions on ceria may be directly involved in the removal mechanism of silicon-based materials during the CMP process. © 2004 The Electrochemical Society. All rights reserved.Keywords
This publication has 24 references indexed in Scilit:
- The Choreography of Everyday Movement2002
- Growth of High Quality Mg-doped GaAs by molecular Beam Epitaxy and Its propertiesJournal of the Korean Physical Society, 2001
- Mechanism of polishing of SiO2 films by CeO2 particlesJournal of Non-Crystalline Solids, 2001
- A Planarization Model in Chemical Mechanical Polishing of Silicon Oxide using High Selective CeO2 SlurryMRS Proceedings, 2001
- Fixed Abrasive Technology for STI CMP on a Web Format ToolMRS Proceedings, 2001
- PERFORMANCE CHARACTERIZATION OF CERIUM OXIDE ABRASIVES FOR CHEMICAL-MECHANICAL POLISHING OF GLASSMachining Science and Technology, 2000
- Low permittivity dielectrics and global planarization for quarter-micron multilevel interconnectionsSolid-State Electronics, 1997
- Chemical Mechanical Planarization of Microelectronic Materials1997
- Polishing Parameters and Their Effect on Glass Polish Performance1995
- Preparation of ceria-based polishing powders from carbonatesJournal of Materials Science, 1991