Temperature Effects in NAND Flash Memories: A Comparison Between 2-D and 3-D Arrays
Authors:
- Davide ResnatiDRDavide Resnati
- Akira GodaAGAkira Goda
- Gianluca NicosiaGNGianluca Nicosia
- Carmine MiccoliCMCarmine Miccoli
- Alessandro S. SpinelliASAlessandro S. Spinelli
- Christian Monzio CompagnoniChristian Monzio Compagnoni
- 24 February 2017
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 38 (4) , 461-464
Abstract
This letter investigates the major differences between planar (2-Dimensional, 2-D) and vertical-channel (3- Dimensional, 3-D) NAND Flash memory arrays in terms of their temperature dependences. Attention is focused on three relevant parameters for memory array operation, namely, cell thresholdvoltage, string saturation current and width of the random telegraph noise distribution. Results highlight that the transition from 2-D to 3-D arrays introduced non-negligible changes in the temperature behavior of these parameters, whose origin is traced back to the different channel material of the technologies, i.e. monocrystalline vs. polycrystalline silicon.Keywords
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