Characteristics of Al2O3 gate dielectrics partially fluorinated by a low energy fluorine beam
- 10 November 2008
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 93 (19) , 191506
Abstract
The partial fluorination of Al2O3 gate dielectrics was examined by exposing an oxide-nitride-aluminum oxide (ONA) stack to a low energy fluorine beam, and its effect on the properties of the ONA was investigated. Exposing ONA to about 10 eV fluorine beam resulted in a 5-nm-thick AlOxFy layer on the ONA by replacing some Al–O to Al–F. The electrical properties such as leakage current and memory window characteristics were improved after fluorination of the ONA, possibly due to the improved charge trapping characteristics through the formation of an AlOxFy layer on the Al2O3 without changing the blocking layer thickness.Keywords
This publication has 12 references indexed in Scilit:
- Low angle forward reflected neutral beam source and its applicationsJournal of Physics D: Applied Physics, 2008
- Fluorine effects on the dipole structures of the Al2O3 thin films and characterization by spectroscopic ellipsometryApplied Physics Letters, 2007
- High-Performance HfO[sub 2] Gate Dielectrics Fluorinated by Postdeposition CF[sub 4] Plasma TreatmentJournal of the Electrochemical Society, 2007
- Band diagram of the AlF3∕SiO2∕Si systemJournal of Applied Physics, 2005
- Charge-trapping device structure of SiO2∕SiN∕high-k dielectric Al2O3 for high-density flash memoryApplied Physics Letters, 2005
- Etch damage evaluation of low-angle, forward-reflected neutral beam etchingMaterials Science and Engineering: C, 2003
- Electrical characterization of thin Al2O3 films grown by atomic layer deposition on silicon and various metal substratesThin Solid Films, 2002
- Development of a low angle forward reflected neutral oxygen beam for materials processingThin Solid Films, 2001
- Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor depositionApplied Physics Letters, 1997
- The effect of fluorine in silicon dioxide gate dielectricsIEEE Transactions on Electron Devices, 1989