Sub-300 nm InGaAs/InP Type-I DHBTs with a 150 nm collector, 30 nm base demonstrating 755 GHz fmaxand 416 GHz fT
- 1 May 2007
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 10928669,p. 403-406
Abstract
We report InP/InGaAs/InP double heterojunction bipolar transistors (DHBT) fabricated using a simple mesa structure. The devices employ a 30 nm highly doped InGaAs base and a 150 nm InP collector containing an InGaAs/InAlAs superlattice grade. These devices exhibit a maximum f max = 755 GHz with a 416 GHz /f T . This is the highest f max reported for a mesa HBT. Through the use of i-line lithography, the emitter junctions have been scaled from 500-600 nm down to 250-300 nm -all while maintaining similar collector to emitter area ratios. Because of the subsequent reduction to the base spreading resistance underneath the emitter R b,spread and increased radial heat flow from the narrower junction, significant increases to f max and reductions in device thermal resistance θ JA are expected and observed. The HBT current gain β ≈ 24-35, BV ceo = 4.60 V, BV cbo = 5.34 V, and the devices operate up to 20 mW / μm 2 before self-heating is observed to affect the DC characteristics.Keywords
This publication has 7 references indexed in Scilit:
- 15-nm base type-II InP/GaAsSb/InP DHBTs with F/sub T/=384 GHz and a 6-V BV/sub CEO/IEEE Transactions on Electron Devices, 2006
- Transistor and circuit design for 100-200-GHz ICsIEEE Journal of Solid-State Circuits, 2005
- Wideband DHBTs using a graded carbon-doped InGaAs baseIEEE Electron Device Letters, 2003
- Nonequilibrium electron transport in HBTsIEEE Transactions on Electron Devices, 2001
- Submicron scaling of HBTsIEEE Transactions on Electron Devices, 2001
- Delay of Kirk effect due to collector current spreading in heterojunction bipolar transistorsIEEE Electron Device Letters, 1996
- Thermal resistance of heterostructure lasersJournal of Applied Physics, 1975