GaInNAs double-barrier quantum well infrared photodetector with the photodetection at 1.24μm

A $\mathrm{Ga}\mathrm{In}\mathrm{N}\mathrm{As}∕\mathrm{Al}\mathrm{As}∕\mathrm{Al}\mathrm{Ga}\mathrm{As}$ double-barrier quantum well infrared photodetector was grown by molecular beam epitaxy and fabricated by standard device processes. The growth structure of the as-grown sample was verified by x-ray diffraction measurement. The photoluminescence emission peak, which is related to the interband transition in the GaInNAs well, was observed at $\sim 1.2\mathrm{eV}$ . After annealing at $650°\mathrm{C}$ , a large blueshift of $40\mathrm{meV}$ was observed. The photocurrent peak at $1.24\mu \mathrm{m}$ is associated with the intersubband transitions in the conduction band of the GaInNAs quantum well. The ten-band $k\bullet p$ calculations agree with the above observations.