Characterization of 1.2 kV SiC Power MOSFETs at Cryogenic Temperatures
- 1 September 2018
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 7010-7015
Abstract
To operate a converter at cryogenic temperatures, understanding the characteristics of power semiconductor devices is critical. This paper presents the characterization of state-of-the-art 1.2 kV SiC MOSFETs from leading manufacturers at cryogenic temperatures. The testing setup consisting of a cryogenic chamber, and a liquid nitrogen Dewar is introduced. With a curve tracer and double pulse test, comprehensive characterization of the SiC MOSFETs including both static and switching performance is conducted and evaluated. Test results indicate the on-resistance increases while the breakdown voltage remains relatively constant at cryogenic temperatures. Other characteristics like threshold voltage and switching loss vary significantly at cryogenic temperatures among devices from different manufacturers.Keywords
This publication has 15 references indexed in Scilit:
- Characterization of high-voltage high-speed switching power semiconductors for high frequency cryogenically-cooled application2017
- Methodology for switching characterization evaluation of wide band-gap devices in a phase-leg configuration2014
- SiC Power Devices Operation from Cryogenic to High Temperature: Investigation of Various 1.2kV SiC Power DevicesMaterials Science Forum, 2014
- A review of cryogenic power electronics - status and applications2013
- Cryogenic and high temperature performance of 4H-SiC power MOSFETs2013
- DC Characteristics of Wide Bandgap Semiconductor Field Effect Transistors at Cryogenic TemperaturesJournal of the Korean Physical Society, 2010
- Power electronics in harsh environments2005
- IGBT operation at cryogenic temperatures: non-punch-through and punch-through comparison2004
- Cryogenic study and modeling of IGBTs2004
- Properties of high-power Cryo-MOSFETs2002