1.8 mΩcm2, 10 A Power MOSFET in 4H-SiC
Authors:
- 1 January 2006
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 01631918,p. 1-4
Abstract
The power MOSFET on 4H-SiC is an attractive high-speed and low-dissipation power switching device. The problem to be solved before realizing the 4H-SiC power MOSFET with low on-resistance is low channel mobility at the SiO 2 /SiC interface. This work has succeeded in increasing the channel mobility in the buried channel IEMOSFET on carbon-face substrate, and has achieved an extremely low on-resistance of 1.8 mΩcm 2 with a blocking voltage of 660 VKeywords
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