New current-defined threshold voltage model from 2D potential distribution calculations in MOSFETs
Authors:
- Serge BiesemansSBSerge Biesemans
- Stefan KubicekSKStefan Kubicek
- Kristin De MeyerKMKristin De Meyer
- 31 January 1996
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 39 (1) , 43-48
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Analytical Calculation of Subthreshold Slope Increase in Short-Channel MOSFET's by Taking Drift Component into AccountJapanese Journal of Applied Physics, 1995
- Threshold voltage modeling and the subthreshold regime of operation of short-channel MOSFETsIEEE Transactions on Electron Devices, 1993
- Threshold voltage model for deep-submicrometer MOSFETsIEEE Transactions on Electron Devices, 1993
- Scaling the Si MOSFET: from bulk to SOI to bulkIEEE Transactions on Electron Devices, 1992
- Short-channel effect in fully depleted SOI MOSFETsIEEE Transactions on Electron Devices, 1989
- Analytical models of threshold voltage and breakdown voltage of short-channel MOSFETs derived from two-dimensional analysisIEEE Journal of Solid-State Circuits, 1979