High Electron Velocity Submicrometer AlN/GaN MOS-HEMTs on Freestanding GaN Substrates
- 2 January 2013
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 34 (2) , 199-201
Abstract
AlN/GaN heterostructures with 1700-cm2/V·s Hall mobility have been grown by molecular beam epitaxy on freestanding GaN substrates. Submicrometer gate-length (LG) metal-oxide-semiconductor (MOS) high-electron-mobility transistors (HEMTs) fabricated from this material show excellent dc and RF performance. LG = 100 nm devices exhibited a drain current density of 1.5 A/mm, current gain cutoff frequency fT of 165 GHz, a maximum frequency of oscillation fmax of 171 GHz, and intrinsic average electron velocity ve of 1.5 ×107 cm/s. The 40-GHz load-pull measurements of LG = 140 nm devices showed 1-W/mm output power, with a 4.6-dB gain and 17% power-added efficiency. GaN substrates provide a way of achieving high mobility, high ve, and high RF performance in AlN/GaN transistors.Keywords
This publication has 19 references indexed in Scilit:
- Effect of Optical Phonon Scattering on the Performance of GaN TransistorsIEEE Electron Device Letters, 2012
- Deeply-scaled self-aligned-gate GaN DH-HEMTs with ultrahigh cutoff frequency2011
- Atomic layer deposited Ta2O5 gate insulation for enhancing breakdown voltage of AlN/GaN high electron mobility transistorsApplied Physics Letters, 2011
- Proximity effects of beryllium-doped GaN buffer layers on the electronic properties of epitaxial AlGaN/GaN heterostructuresSolid-State Electronics, 2010
- Dependence of ohmic contact resistance on barrier thickness of AlN/GaN HEMT structuresSolid-State Electronics, 2010
- Polarization-engineered removal of buffer leakage for GaN transistorsApplied Physics Letters, 2010
- AlN/GaN insulated gate HEMTs with HfO 2 gate dielectricElectronics Letters, 2009
- Influence of the Dynamic Access Resistance in the$g_m$and$f_T$Linearity of AlGaN/GaN HEMTsIEEE Transactions on Electron Devices, 2005
- Importance of source and drain resistance to the maximum f/sub T/ of millimeter-wave MODFETsIEEE Electron Device Letters, 1989
- A new method for determining the FET small-signal equivalent circuitIEEE Transactions on Microwave Theory and Techniques, 1988