The use of PVP polymer and PVP:Gd2O3 nanocomposite interlayers to improve electrical features of Schottky barrier diodes
- 27 January 2026
- journal article
- research article
- Published by Springer Nature in Journal of Materials Science: Materials in Electronics
- Vol. 37 (3) , 267
Abstract
No abstract availableKeywords
This publication has 40 references indexed in Scilit:
- Analysis of the electrical parameters, frequency, and voltage dependence of surface states and series resistance in Au/n-Si Schottky diodes (SDs) with (Fe2O3) interlayerJournal of Materials Science: Materials in Electronics, 2025
- Electrical properties, conduction mechanisms, and voltage dependent curves of interface traps, series resistance in Au/(Sn:Fe2O3)/n-Si structures using impedance measurementsJournal of Materials Science: Materials in Electronics, 2025
- A detailed analysis of electrical parameters and energy dependence of interface Traps in Au-(Co:PVA)-nSi-Al structure via impedance measurementsJournal of Materials Science: Materials in Electronics, 2025
- Comparison of electrical properties of pure and copper-doped diamond-like carbon interfacial-layered Schottky devices under different temperature conditionsJournal of Materials Science: Materials in Electronics, 2025
- A comparison electrical characteristics of the Au/(pure-PVA)/n-Si and Au/(CdTe doped-PVA)/n-Si (MPS) type Schottky structures using I–V and C–V measurementsJournal of Materials Science: Materials in Electronics, 2024
- Effect of Gadolinium on Electrical Properties of Polyethyleneimine Functionalized and Nitrogen‐Doped Graphene Quantum Dot Nanocomposite Based DiodeAdvanced Electronic Materials, 2023
- Dielectric spectroscopy characterization of relaxation in composite based on (PVA–PVP) blend for nickel–cadmium batteriesJournal of Materials Science: Materials in Electronics, 2020
- On the temperature dependent current transport mechanisms and barrier inhomogeneity in Au/SnO2–PVA/n-Si Schottky barrier diodesApplied Physics A, 2017
- Electrical Properties and Current Transport Mechanisms of the Au/n-GaN Schottky Structure with Solution- Processed High-k BaTiO3 InterlayerJournal of Electronic Materials, 2014
- Electrical Characterization of Organic Electronic Materials and Devices2009