Comparative Analysis of the GaN Nonpolar Plane Morphology by Wet Treatment and Its Effect on Electrical Properties in Trench MOSFET
- 16 May 2023
- journal article
- research article
- Published by American Chemical Society (ACS) in ACS Applied Materials & Interfaces
- Vol. 15 (21) , 26159-26165
Abstract
The morphological characteristics of the GaN nonpolarsidewallswith different crystal plane orientations were studied under variousTMAH wet treatment conditions, and the effect of different morphologicalfeatures on device carrier mobility was modeled and analyzed. AfterTMAH wet treatment, the morphology of the a-planesidewall presents multiplied zigzag triangular prisms along the [0001]direction, which consist of two adjacent m-planeand c-plane on top. While along the [112 ̅0]direction, the m-plane sidewall is represented bythin, striped prisms with three m-plane and a c-plane on the side. The density and size of sidewall prismswere studied by varying the solution temperature and immersion period.The prism density decreases linearly as the solution temperature rises.With increased immersion time, both a-plane and m-plane sidewalls show smaller prism sizes. Vertical GaNtrench MOSFET with nonpolar a- and m-plane sidewall channels were fabricated and characterized. By properlytreated in TMAH solution, transistors with an a-planesidewall conduction channel exhibit higher current density, from 241to 423 A cm(-2)@V (DS) =10 V, V (GS) = 20 V, and higher mobility,from 2.9 to 2.0 cm(2) (V s)(-1), comparedto those of m-plane sidewall devices. The temperaturedependence on mobility is also discussed, and a modeling analysisfor the difference in carrier mobility is then performed.Keywords
Funding Information
- Youth Innovation Promotion Association of the Chinese Academy of Sciences (2020321)
- National Natural Science Foundation of China (92163204)
- Suzhou Science and Technology Foundation (SYG202027)
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