The comparative electrical characteristics of Au/n-Si (MS) diodes with and without a 2% graphene cobalt-doped Ca3Co4Ga0.001Ox interfacial layer at room temperature
Authors:
- A. KayaAKA. Kaya
- E. MarılEME. Marıl
- Ş. AltındalŞAŞ. Altındal
- İ. UsluIUİ. Uslu
- 1 January 2016
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 149, 166-171
Abstract
No abstract availableThis publication has 25 references indexed in Scilit:
- On the analysis of the leakage current in Au/Ca3Co4Ga0.001Ox/n-Si structure in the temperature range of 80–340KMaterials Science in Semiconductor Processing, 2015
- Temperature-dependent current–voltage characteristics of Se Schottky contact to n-type GeThin Solid Films, 2013
- Temperature dependent current-transport mechanism in Au/(Zn-doped)PVA/n-GaAs Schottky barrier diodes (SBDs)Sensors and Actuators A: Physical, 2013
- Electrical characterization of Au/n-GaN metal–semiconductor and Au/SiO2/n-GaN metal–insulator–semiconductor structuresJournal of Alloys and Compounds, 2011
- Electrical characteristics of Mo/4H-SiC Schottky diodes having ion-implanted guard rings: temperature and implant-dose dependenceSemiconductor Science and Technology, 2011
- Rectification and barrier height inhomogeneous in Rhodamine B based organic Schottky diodeSynthetic Metals, 2011
- Study of current–voltage–temperature (I–V–T) and capacitance–voltage–temperature (C–V–T) characteristics of molybdenum Schottky contacts on n-InP (100)Journal of Alloys and Compounds, 2009
- Examination by interfacial layer and inhomogeneous barrier height model of temperature-dependent I–V characteristics in Co/p-InP contactsJournal of Alloys and Compounds, 2009
- Analysis of I–V measurements on PtSi-Si Schottky structures in a wide temperature rangeSolid-State Electronics, 1991
- Normalized thermionic-field (T-F) emission in metal-semiconductor (Schottky) barriersSolid-State Electronics, 1969