Real-Time Aging Detection of SiC MOSFETs
- 29 August 2018
- journal article
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Industry Applications
- Vol. 55 (1) , 600-609
Abstract
This paper presents a comprehensive study on degradation monitoring of SiC MOSFETs and proposes an early warning method to detect ageing. The proposed plug-in tool can be integrated to smart gate drivers or directly to power converters. During the accelerated ageing tests (power cycling within safe operating area) several electrical parameters are monitored to find out critical signatures and precursors of failure. Among those, gate leakage current is identified as the most practical precursor which exhibits consistent changes in all aged devices and is relatively easy to monitor. Due to its simple scheme and low cost, it can potentially be embedded into commercial gate drivers featuring improved reliability options.Keywords
Funding Information
- Office of Naval Research (N00014-15-1-2325)
- TxACE (ID 2712.026)
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