Scaling/LER study of Si GAA nanowire FET using 3D finite element Monte Carlo simulations
Authors:
- Muhammad A. ElmessaryMEMuhammad A. Elmessary
- Daniel NagyDaniel Nagy
- Manuel AldegundeMAManuel Aldegunde
- Natalia SeoaneNSNatalia Seoane
- Guillermo IndalecioGIGuillermo Indalecio
- Jari LindbergJLJari Lindberg
- Wulf DettmerWulf Dettmer
- Djordje PerićDjordje Perić
- Antonio J. García-LoureiroAntonio J. García-Loureiro
- Karol KalnaKarol Kalna
- 1 February 2017
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 128, 17-24
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
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