Electrical study of sulfur passivated In0.53Ga0.47As MOS capacitor and transistor with ALD Al2O3 as gate insulator
Authors:
- 1 July 2009
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 86 (7-9) , 1554-1557
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Inversion-Mode Self-Aligned $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ N-Channel Metal-Oxide-Semiconductor Field-Effect Transistor With HfAlO Gate Dielectric and TaN Metal GateIEEE Electron Device Letters, 2008
- High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistor with Al2O3∕Ga2O3(Gd2O3) as gate dielectricsApplied Physics Letters, 2008
- On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor SubstratesIEEE Transactions on Electron Devices, 2008
- Submicrometer Inversion-Type Enhancement-Mode InGaAs MOSFET With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Gate DielectricIEEE Electron Device Letters, 2007
- Characteristic trapping lifetime and capacitance-voltage measurements of GaAs metal-oxide-semiconductor structuresApplied Physics Letters, 2007
- Mobility Measurement and Degradation Mechanisms of MOSFETs Made With Ultrathin High-k DielectricsIEEE Transactions on Electron Devices, 2004