Antiambipolar Devices Based on 2D Tellurium with Surface Selenium Dopants for Multivalued Logic

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Abstract
As the conventional binary CMOS technology approaches its fundamental limits in device scaling and energy efficiency, multivalued logic (MVL) has emerged as a promising strategy to enhance information density and computational capability. Two-dimensional tellurium (Te), owing to its outstanding hole transport properties, provides an attractive material platform for advanced logic devices. In this work, surface selenium-doped tellurium thin films (TexSe1–x) are employed as a key functional layer, exhibiting gate-tunable, p-type-dominated ambipolar transport behavior. By integrating TexSe1–x with n-type two-dimensional semiconductors, heterojunction devices with pronounced antiambipolar transport characteristics are constructed, establishing a solid foundation for novel logic functionalities. Based on these heterostructures, two representative logic device demonstrations are realized: (i) a binary inverter based on a TexSe1–x/MoS2 heterojunction, exhibiting a characteristic Λ-shaped voltage transfer curve; and (ii) a stable ternary inverter implemented in a TexSe1–x/MoSe2 device, showing a distinct W-shaped transfer characteristic with a logic-state switching ratio approaching 104. These results highlight the significant potential of tellurium-based heterostructures for scalable binary and multivalued logic devices, offering a viable platform for next-generation MVL circuits.
Funding Information
  • National Key Research and Development Program of China (2024YFA1208400)
  • National Key Research and Development Program of China (2024YFF0508503)
  • National Natural Science Foundation of China (12034001)
  • National Natural Science Foundation of China (52075385)
  • National Natural Science Foundation of China (62431018)

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