Main properties of Al2O3 thin films deposited by magnetron sputtering of an Al2O3 ceramic target at different radio-frequency power and argon pressure and their passivation effect on p-type c-Si wafers
Authors:
- J.A. García-ValenzuelaJGJ.A. García-Valenzuela
- R. RiveraRRR. Rivera
- A.B. Morales-VilchesAMA.B. Morales-Vilches
- L.G. GerlingLGL.G. Gerling
- A. CaballeroACA. Caballero
- J.M. AsensiJAJ.M. Asensi
- C. VozC. Voz
- J. BertomeuJBJ. Bertomeu
- J. AndreuJAJ. Andreu
- 1 November 2016
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 619, 288-296
Abstract
No abstract availableKeywords
Funding Information
- Spanish Ministerio de Economia y Competitividad (ENE2013-48629-C4-1-R, ENE2013-48629-C4-2-R)
- Mexican Consejo Nacional de Ciencia y Tecnología (208159, 251082)
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