Preparation Capacity of Reactive Evaporation Method for Amorphous Silicon
Authors:
- Masanori ShindoMSMasanori Shindo
- Shigeru SatoSSShigeru Sato
- Isao MyokanIMIsao Myokan
- Shigeru ManoSMShigeru Mano
- Takuji ShibataTSTakuji Shibata
- 1 January 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (1R)
Abstract
Doped a-Si:H films, and nondoped and doped a-Si:N:H films were prepared by the electron-beam deposition of silicon, hydrogenation being achieved by supplying hydrogen ions to the film surface during deposition. The photo- and dark-conductivities showed characteristics similar to those of films prepared by SiH4 glow discharge and CVD. Boron, in the form B2H6, and Al were used as p-type dopants, while Sb was used as an n-type dopant.Keywords
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