TCAD Strain Calibration Versus Nanobeam Diffraction of Source/Drain Stressors for Ge MOSFETs
Authors:
- Rudolf Theoderich BuhlerRBRudolf Theoderich Buhler
- Geert EnemanGEGeert Eneman
- Paola FaviaPFPaola Favia
- Liesbeth Johanna WittersLWLiesbeth Johanna Witters
- Andriy HikavyyAHAndriy Hikavyy
- Roger LooRLRoger Loo
- Hugo BenderHBHugo Bender
- Nadine CollaertNCNadine Collaert
- Eddy SimoenESEddy Simoen
- Joao Antonio MartinoJMJoao Antonio Martino
- Cor ClaeysCCCor Claeys
- 12 February 2015
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 62 (4) , 1079-1084
Abstract
TCAD finite-element process simulations have been performed on Ge-channel n and pMOSFETs with embedded source/drain stressors or a strained Ge channel on a relaxed SiGe strain relaxed buffer (SRB), respectively, and compared with nanobeam diffraction strain measurements. While there is overall a good agreement between the simulated and experimental strain profiles, some deviations may occur, due to the presence of extended defects in the strain relaxed Ge buffer layers. This highlights the importance of selection of a strain-free reference in the relaxed Ge or SiGe SRB.Keywords
Funding Information
- imec Core Partners for the Logic and Advanced Ge Devices Program
- National Council for Scientific and Technological Development
- Coordenação de Aperfeiçoamento de Pessoal de Nível Superior
- Fundação de Amparo à Pesquisa do Estado de São Paulo
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