Degang Chen
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
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Research Interests
Degang Chen has a total of 95 co-authors. Here are the top co-authors by number of shared publications:
- Emmanuel Nti Darko
Department of Electrical and Computer Engineering, Iowa State University, Ames, IA 50011, USA
14 shared publications - Isaac Bruce
Department of Electrical and Computer Engineering, Iowa State University, Ames, IA 50011, USA
12 shared publications - Saeid Karimpour
Department of Electrical and Computer Engineering, Iowa State University, Ames, IA 50011, USA
10 shared publications - Michael Sekyere
Department of Electrical and Computer Engineering (ECpE), Iowa State University
7 shared publications - Kushagra Bhatheja
Department of Electrical and Computer Engineering, Iowa State University, Ames, IA 50011, USA
6 shared publications - Shravan K. Chaganti
Department of Electrical and Computer Engineering, Iowa State University, Ames, IA, USA
5 shared publications
Latest Publications
- Open Access
Deterministic Foreground Calibration of Gain and Integral Nonlinearity in Constant-Slope Digital-to-Time Converters for Fractional Output Dividers
Fractional output dividers (FODs) derive many clock domains from one integer-N phase-locked loop, but the gain error and integral nonlinearity (INL) of their digital-to-time converter (DTC) limit spectral purity. Existing FOD calibrations estimate the INL statistically, with no deterministic step count or residual bound. This paper presents a deterministic foreground calibration that measures the DTC bit weights in the delay domain. Reconfiguring an R-2R ladder bit by bit inside a constant-slope DTC maps each weight to a SAR-driven edge comparison against a replica chain, so the five mismatch-dominant weights are extracted inside a fixed 124-decision sequence and corrected through a 32-entry look-up table. Allocating one input period to discharge and periods to DAC settling enables a 10 GHz input. Exact conditions are derived for gain measurement, offset–gain convergence, and weight extraction, together with the smooth curvature that per-bit calibration cannot observe. Transistor-level simulations in 22 nm FDSOI show chain tracking of 0.94 and offset–gain convergence below half the 12.2 fs calibration step. A 200-die system-level Monte Carlo anchored to these statistics reduces the median peak INL from 4.1 to 0.32 LSB (24.4 fs LSB) and the worst fractional spur from dBc to the dBc quantization floor after 0.59 ms of calibration; the resulting 28 fs rms edge jitter permits 95 dB aperture-limited SNDR in a sampled sensor front end at 100 MHz.Open AccessDeterministic Foreground Calibration of Gain and Integral Nonlinearity in Constant-Slope Digital-to-Time Converters for Fractional Output Dividers
Fractional output dividers (FODs) derive many clock domains from one integer-N phase-locked loop, but the gain error and integral nonlinearity (INL) of their digital-to-time converter (DTC) limit spectral purity. Existing FOD calibrations estimate the INL statistically, with no deterministic step count or residual bound. This paper presents a deterministic foreground calibration that measures the DTC bit weights in the delay domain. Reconfiguring an R-2R ladder bit by bit inside a constant-slope DTC maps each weight to a SAR-driven edge comparison against a replica chain, so the five mismatch-dominant weights are extracted inside a fixed 124-decision sequence and corrected through a 32-entry look-up table. Allocating one input period to discharge and periods to DAC settling enables a 10 GHz input. Exact conditions are derived for gain measurement, offset–gain convergence, and weight extraction, together with the smooth curvature that per-bit calibration cannot observe. Transistor-level simulations in 22 nm FDSOI show chain tracking of 0.94 and offset–gain convergence below half the 12.2 fs calibration step. A 200-die system-level Monte Carlo anchored to these statistics reduces the median peak INL from 4.1 to 0.32 LSB (24.4 fs LSB) and the worst fractional spur from dBc to the dBc quantization floor after 0.59 ms of calibration; the resulting 28 fs rms edge jitter permits 95 dB aperture-limited SNDR in a sampled sensor front end at 100 MHz. - Open Access
- 7 September 2026
- Published by MDPI AG in Electronics
- Vol. 15 (17) , 4036
A Back-Gate Corner-Closure Methodology for All-Digital Multi-Modulus Dividers in 22 nm FDSOI
The first divider in the feedback path of a frequency synthesizer runs at the full oscillator frequency and so constrains the speed and the power of the loop. Current-mode logic reaches high speed but draws a constant bias current independent of switching activity, whereas an all-digital, fully static-CMOS divider draws only dynamic and leakage current at the cost of far greater timing sensitivity to process, voltage, and temperature (PVT) variation. This paper presents a wide-range all-digital multi-modulus divider in 22 nm fully depleted silicon-on-insulator (FDSOI) technology, together with the methodology that makes the digital approach robust. The chain exhibits three distinct PVT failure modes, setup at the slow corners, hold at the fast-cold corner, and collapse of the internal clock duty cycle at the skewed corners; each is identified analytically and closed by a scheme combining back-gate body bias, a per-stage programmable delay trim, and a systematic integral-nonlinearity trim. Characterization is by post-layout simulation over a 45-point corner matrix, with the applied back-gate rail voltages and trim codes reported for every point. The divider covers 8 to 127, reaches GHz at the typical corner, and holds a worst-case GHz across the corner box against a 33 GHz target that the uncompensated chain misses at the slow and skewed low-supply corners (SS, SF, and FS at V). A paired Monte Carlo campaign of 100 samples with process and mismatch variation, run at the binding corner, raises the yield at the target from 39% uncompensated to 72% with a single global back-gate setting and 99% with a per-die setting. At the target the divider consumes mW at ( GHz/mW) with fs of additive jitter in a core. The bias and trim settings are chosen by an external search and applied as fixed per-corner values; the monitors, controller, and bias generator that an autonomous implementation would require are specified but not designed, so the work demonstrates externally calibrated corner closure rather than a self-contained compensation system.- 7 September 2026
- Published by MDPI AG in Electronics
- Vol. 15 (17) , 4036
Open AccessA Back-Gate Corner-Closure Methodology for All-Digital Multi-Modulus Dividers in 22 nm FDSOI
The first divider in the feedback path of a frequency synthesizer runs at the full oscillator frequency and so constrains the speed and the power of the loop. Current-mode logic reaches high speed but draws a constant bias current independent of switching activity, whereas an all-digital, fully static-CMOS divider draws only dynamic and leakage current at the cost of far greater timing sensitivity to process, voltage, and temperature (PVT) variation. This paper presents a wide-range all-digital multi-modulus divider in 22 nm fully depleted silicon-on-insulator (FDSOI) technology, together with the methodology that makes the digital approach robust. The chain exhibits three distinct PVT failure modes, setup at the slow corners, hold at the fast-cold corner, and collapse of the internal clock duty cycle at the skewed corners; each is identified analytically and closed by a scheme combining back-gate body bias, a per-stage programmable delay trim, and a systematic integral-nonlinearity trim. Characterization is by post-layout simulation over a 45-point corner matrix, with the applied back-gate rail voltages and trim codes reported for every point. The divider covers 8 to 127, reaches GHz at the typical corner, and holds a worst-case GHz across the corner box against a 33 GHz target that the uncompensated chain misses at the slow and skewed low-supply corners (SS, SF, and FS at V). A paired Monte Carlo campaign of 100 samples with process and mismatch variation, run at the binding corner, raises the yield at the target from 39% uncompensated to 72% with a single global back-gate setting and 99% with a per-die setting. At the target the divider consumes mW at ( GHz/mW) with fs of additive jitter in a core. The bias and trim settings are chosen by an external search and applied as fixed per-corner values; the monitors, controller, and bias generator that an autonomous implementation would require are specified but not designed, so the work demonstrates externally calibrated corner closure rather than a self-contained compensation system. - Open Access
- 28 July 2026
- Published by MDPI AG in Preprints.org
A PVT-Compensated All-Digital Multi-Modulus Divider in 22 nm FDSOI Using Back-Gate Corner Closure
The first divider in an integer- or fractional-N frequency synthesizer runs at the full oscillator frequency and so constrains both the speed and the power of the loop. Current-mode logic (CML) reaches high speed but draws a constant bias current independent of activity, whereas a fully static-CMOS (all-digital) divider draws only dynamic and leakage current at the cost of much greater timing sensitivity to process, voltage, and temperature (PVT) variation. This paper presents a wide-range all-digital multi-modulus divider in a 22 nm fully depleted silicon-on-insulator (FDSOI) technology, characterized entirely by post-layout and Monte Carlo simulation, together with the methodology that makes the timing-sensitive digital approach robust. The all-digital chain exhibits three PVT failure modes, setup at the slow-hot corner, hold at the fast-cold corner, and internal duty-cycle collapse at the skewed corners; each is predicted analytically and closed by a three-method scheme built on the FDSOI back gate, a per-stage delay trim, and a systematic integral-nonlinearity trim. The divider covers N=8 to 127 at up to 39.5 GHz at the typical corner, with every process corner held at or above 35 GHz by back-gate compensation, the highest speed among the compared dividers and the only one with explicit PVT compensation. At the 33 GHz target it consumes 5.3 mW at N=127 (6.2 GHz/mW) with an activity-scaling supply current, benchmarked against the measured power of published CML dividers. Per-die body-bias and trim raise the Monte Carlo yield from 78% to 99.3%, at 150 fs additive jitter, in a compact 0.005 mm2 core.
- 28 July 2026
- Published by MDPI AG in Preprints.org
Open AccessA PVT-Compensated All-Digital Multi-Modulus Divider in 22 nm FDSOI Using Back-Gate Corner Closure
The first divider in an integer- or fractional-N frequency synthesizer runs at the full oscillator frequency and so constrains both the speed and the power of the loop. Current-mode logic (CML) reaches high speed but draws a constant bias current independent of activity, whereas a fully static-CMOS (all-digital) divider draws only dynamic and leakage current at the cost of much greater timing sensitivity to process, voltage, and temperature (PVT) variation. This paper presents a wide-range all-digital multi-modulus divider in a 22 nm fully depleted silicon-on-insulator (FDSOI) technology, characterized entirely by post-layout and Monte Carlo simulation, together with the methodology that makes the timing-sensitive digital approach robust. The all-digital chain exhibits three PVT failure modes, setup at the slow-hot corner, hold at the fast-cold corner, and internal duty-cycle collapse at the skewed corners; each is predicted analytically and closed by a three-method scheme built on the FDSOI back gate, a per-stage delay trim, and a systematic integral-nonlinearity trim. The divider covers N=8 to 127 at up to 39.5 GHz at the typical corner, with every process corner held at or above 35 GHz by back-gate compensation, the highest speed among the compared dividers and the only one with explicit PVT compensation. At the 33 GHz target it consumes 5.3 mW at N=127 (6.2 GHz/mW) with an activity-scaling supply current, benchmarked against the measured power of published CML dividers. Per-die body-bias and trim raise the Monte Carlo yield from 78% to 99.3%, at 150 fs additive jitter, in a compact 0.005 mm2 core.
- Open Access
A Fully Integrated Monolithic Monitor for Aging-Induced Leakage Current Characterization
This paper presents a precision, wide-dynamic-range leakage current sensor tailored for in-situ monitoring of aging mechanisms such as Time-Dependent Dielectric Breakdown (TDDB) in both active and passive components. The proposed architecture supports high-voltage stress and is fully monolithic, integrating a current-to-voltage front-end, tunable-gain amplifier, and a successive approximation register (SAR) analog-to-digital converter (ADC). To validate the concept, a discrete-component prototype was implemented and evaluated across a leakage current range of 1 nA to 1 A. The sensor achieves 12-bit resolution with measured integral non-linearity (INL) and differential non-linearity (DNL) within LSB and LSB, respectively. Compared to prior monitors, the design enables linear current digitization and supports high-voltage stress, features essential for accurate and scalable TDDB characterization. Applications include embedded reliability monitoring in power converters, analog building blocks, and large-scale aging test arrays.Open AccessA Fully Integrated Monolithic Monitor for Aging-Induced Leakage Current Characterization
This paper presents a precision, wide-dynamic-range leakage current sensor tailored for in-situ monitoring of aging mechanisms such as Time-Dependent Dielectric Breakdown (TDDB) in both active and passive components. The proposed architecture supports high-voltage stress and is fully monolithic, integrating a current-to-voltage front-end, tunable-gain amplifier, and a successive approximation register (SAR) analog-to-digital converter (ADC). To validate the concept, a discrete-component prototype was implemented and evaluated across a leakage current range of 1 nA to 1 A. The sensor achieves 12-bit resolution with measured integral non-linearity (INL) and differential non-linearity (DNL) within LSB and LSB, respectively. Compared to prior monitors, the design enables linear current digitization and supports high-voltage stress, features essential for accurate and scalable TDDB characterization. Applications include embedded reliability monitoring in power converters, analog building blocks, and large-scale aging test arrays. - Open Access
- 14 November 2025
- Published by MDPI AG in Preprints.org
A Fully Integrated Monolithic Monitor for Aging-Induced Leakage Current Characterization
This paper presents a precision, wide-dynamic-range leakage current sensor tailored for in-situ monitoring of aging mechanisms such as Time-Dependent Dielectric Breakdown (TDDB) in both active and passive components. The proposed architecture supports high-voltage stress and is fully monolithic, integrating a current-to-voltage front-end, tunable gain amplifier, and a successive approximation register (SAR) analog-to-digital converter (ADC). To validate the concept, a discrete-component prototype was implemented and evaluated across a leakage current range of 1nA to 1 μA. The sensor achieves 12-bit resolution with measured integral nonlinearity (INL) and differential nonlinearity (DNL) within ±1.5 LSB and ±0.3 LSB, respectively. Compared to prior monitors, the design enables linear current digitization and compatibility with high-voltage stress, features essential for accurate and scalable TDDB characterization. Applications include embedded reliability monitoring in power converters, analog building blocks, and large-scale aging test arrays.
- 14 November 2025
- Published by MDPI AG in Preprints.org
Open AccessA Fully Integrated Monolithic Monitor for Aging-Induced Leakage Current Characterization
This paper presents a precision, wide-dynamic-range leakage current sensor tailored for in-situ monitoring of aging mechanisms such as Time-Dependent Dielectric Breakdown (TDDB) in both active and passive components. The proposed architecture supports high-voltage stress and is fully monolithic, integrating a current-to-voltage front-end, tunable gain amplifier, and a successive approximation register (SAR) analog-to-digital converter (ADC). To validate the concept, a discrete-component prototype was implemented and evaluated across a leakage current range of 1nA to 1 μA. The sensor achieves 12-bit resolution with measured integral nonlinearity (INL) and differential nonlinearity (DNL) within ±1.5 LSB and ±0.3 LSB, respectively. Compared to prior monitors, the design enables linear current digitization and compatibility with high-voltage stress, features essential for accurate and scalable TDDB characterization. Applications include embedded reliability monitoring in power converters, analog building blocks, and large-scale aging test arrays.
- Open Access
Universal Digital Calibration of Mismatched DACs: Enabling Sub-0.02 mm2 Area with Redundancy and Segmented Correction
This paper presents a novel methodology for the design and calibration of ultra-compact digital-to-analog converters (DACs), integrating architectural redundancy and a digital calibration algorithm. The proposed calibration approach generates pre-distortion codes that correct both positive and negative nonlinearity errors, even in designs with severe mismatch or relaxed layout constraints. This enables the use of aggressively scaled devices while maintaining high linearity and spectral fidelity. The algorithm is architecture-agnostic and compatible with resistor-string, current-steering, and hybrid DAC structures. It operates with minimal memory, low latency, and supports both foreground and background calibration modes. The method is validated through simulation and silicon measurement of three 14-bit DAC architectures fabricated in TSMC 180 nm CMOS. Post-calibration results demonstrate linearity within ±0.5–1.2 LSB, ENOB up to 13.8 bits, and significant improvements in SNR, SFDR, and THD. The compact layouts—occupying as little as 0.0169 mm2—highlight the scalability of the proposed method for applications such as analog AI accelerators and high-density mixed-signal SoCs.
Open AccessUniversal Digital Calibration of Mismatched DACs: Enabling Sub-0.02 mm2 Area with Redundancy and Segmented Correction
This paper presents a novel methodology for the design and calibration of ultra-compact digital-to-analog converters (DACs), integrating architectural redundancy and a digital calibration algorithm. The proposed calibration approach generates pre-distortion codes that correct both positive and negative nonlinearity errors, even in designs with severe mismatch or relaxed layout constraints. This enables the use of aggressively scaled devices while maintaining high linearity and spectral fidelity. The algorithm is architecture-agnostic and compatible with resistor-string, current-steering, and hybrid DAC structures. It operates with minimal memory, low latency, and supports both foreground and background calibration modes. The method is validated through simulation and silicon measurement of three 14-bit DAC architectures fabricated in TSMC 180 nm CMOS. Post-calibration results demonstrate linearity within ±0.5–1.2 LSB, ENOB up to 13.8 bits, and significant improvements in SNR, SFDR, and THD. The compact layouts—occupying as little as 0.0169 mm2—highlight the scalability of the proposed method for applications such as analog AI accelerators and high-density mixed-signal SoCs.
- Open Access
Automated Detection of Site-to-Site Variations: A Sample-Efficient Framework for Distributed Measurement Networks
Distributed measurement networks, from semiconductor testing arrays to environmental sensor grids, medical diagnostic systems, and agricultural monitoring stations, face a fundamental challenge: undetected site-to-site variations that silently corrupt data integrity. These variations create systematic biases between supposedly identical measurement units, which undermine scientific reproducibility and yield. The current site-to-site variation detection methods require extensive sampling or make rigid distributional assumptions, making them impractical for many applications. We introduce a novel framework that transforms measurement data into density-based feature vectors using Kernel Density Estimation, followed by anomaly detection with Isolation Forest. To automate the final classification, we then apply a novel probabilistic thresholding method using Gaussian Mixture Models, which removes the need for user-defined anomaly proportions. This approach identifies problematic measurement sites without predefined anomaly proportions or distributional constraints. Unlike traditional methods, our method works efficiently with limited samples and adapts to diverse measurement contexts. We demonstrate its effectiveness using semiconductor multisite testing as a case study, where our approach consistently outperforms state-of-the-art methods in detection accuracy and sample efficiency when validated against industrial testing environments.
Open AccessAutomated Detection of Site-to-Site Variations: A Sample-Efficient Framework for Distributed Measurement Networks
Distributed measurement networks, from semiconductor testing arrays to environmental sensor grids, medical diagnostic systems, and agricultural monitoring stations, face a fundamental challenge: undetected site-to-site variations that silently corrupt data integrity. These variations create systematic biases between supposedly identical measurement units, which undermine scientific reproducibility and yield. The current site-to-site variation detection methods require extensive sampling or make rigid distributional assumptions, making them impractical for many applications. We introduce a novel framework that transforms measurement data into density-based feature vectors using Kernel Density Estimation, followed by anomaly detection with Isolation Forest. To automate the final classification, we then apply a novel probabilistic thresholding method using Gaussian Mixture Models, which removes the need for user-defined anomaly proportions. This approach identifies problematic measurement sites without predefined anomaly proportions or distributional constraints. Unlike traditional methods, our method works efficiently with limited samples and adapts to diverse measurement contexts. We demonstrate its effectiveness using semiconductor multisite testing as a case study, where our approach consistently outperforms state-of-the-art methods in detection accuracy and sample efficiency when validated against industrial testing environments.
- Open Access
- 30 August 2025
- Published by MDPI AG in Electronics
- Vol. 14 (17) , 3477
Redundancy-Interpolated Three-Segment DAC with On-Chip Digital Calibration for Improved Static Linearity
This paper presents a three-segment interpolating Digital-to-Analog Converter (DAC) that employs a redundancy-based interpolation scheme and digital calibration to enhance linearity. The proposed architecture consists of a Most Significant Bit (MSB) resistor string DAC, an Intermediate Significant Bit (ISB) resistor string DAC, and a Least Significant Bit (LSB) interpolating differential buffer. The MSB segment uses a split-unit resistor structure () to improve post-calibration differential nonlinearity (DNL) by minimizing voltage step errors. A fully digital calibration algorithm is implemented to compensate for process variations, component mismatches, and finite switch resistance, ensuring a highly linear DAC output. The proposed 16-bit DAC is implemented in a 180 nm CMOS process and is segmented into a 5-bit MSB stage, a 5-bit ISB stage, and a 6-bit LSB stage. The structure achieves post-calibration integral nonlinearity (INL) and differential nonlinearity (DNL) values of less than ±1 LSB. Simulation results validate the proposed design, demonstrating enhanced linearity and reduced area overhead compared with conventional segmented architectures.- 30 August 2025
- Published by MDPI AG in Electronics
- Vol. 14 (17) , 3477
Open AccessRedundancy-Interpolated Three-Segment DAC with On-Chip Digital Calibration for Improved Static Linearity
This paper presents a three-segment interpolating Digital-to-Analog Converter (DAC) that employs a redundancy-based interpolation scheme and digital calibration to enhance linearity. The proposed architecture consists of a Most Significant Bit (MSB) resistor string DAC, an Intermediate Significant Bit (ISB) resistor string DAC, and a Least Significant Bit (LSB) interpolating differential buffer. The MSB segment uses a split-unit resistor structure () to improve post-calibration differential nonlinearity (DNL) by minimizing voltage step errors. A fully digital calibration algorithm is implemented to compensate for process variations, component mismatches, and finite switch resistance, ensuring a highly linear DAC output. The proposed 16-bit DAC is implemented in a 180 nm CMOS process and is segmented into a 5-bit MSB stage, a 5-bit ISB stage, and a 6-bit LSB stage. The structure achieves post-calibration integral nonlinearity (INL) and differential nonlinearity (DNL) values of less than ±1 LSB. Simulation results validate the proposed design, demonstrating enhanced linearity and reduced area overhead compared with conventional segmented architectures.