Abanob Shehata
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Previous Organizations / Institutes
The organizations / institutes from the scholar's other articles in the past ten years
Research Subjects
Abanob Shehata has a total of 47 co-authors. Here are the top co-authors by number of shared publications:
- Chenxin Liu
Department of Electrical and Electronic Engineering, Institute of Science Tokyo, Tokyo, Japan
5 shared publications - Kenichi Okada
Department of Electrical and Electronic Engineering, Institute of Science Tokyo, Tokyo, Japan
5 shared publications - Hans Herdian
Department of Electrical and Electronic Engineering, Institute of Science Tokyo, Tokyo, Japan
4 shared publications - Hiroyuki Sakai
Department of Electrical and Electronic Engineering, Institute of Science Tokyo, Tokyo, Japan
4 shared publications - Kazuaki Kunihiro
Department of Electrical and Electronic Engineering, Institute of Science Tokyo, Tokyo, Japan
4 shared publications - Atsushi Shirane
Department of Electrical and Electronic Engineering, Institute of Science Tokyo, Tokyo, Japan
3 shared publications
Latest Publications
- Open Access
- 3 February 2026
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 61 (4) , 1294-1307
A 52 Gb/s 8.9-dBm EIRP 300-GHz-Band Amplifier-Last Outphasing Transmitter With Path Mismatch Calibration in 65-nm CMOS
This article presents a 300-GHz-band amplifier-last outphasing phased-array transmitter with path mismatch calibration in a 65-nm CMOS technology. Calibration is essential for mitigating impairments in outphasing systems used for wideband communication. The transmitter integrates two independent sub-THz LO generation chains to calibrate the phase mismatch between two paths and configure the phase delay between different phased-array elements. An integrated RF outphasing amplifier calibrates the amplitude mismatch and improves the transmitter’s effective isotropic radiated power (EIRP). After calibration, the transmitter exhibits a 3.3-dB improvement in error vector magnitude and supports 16 QAM modulation at 52 Gb/s over a distance of 9 cm. It achieves a peak EIRP of 8.9 dBm at 246 GHz, with a minimum EIRP of 5.0 dBm across the frequency range from 237 to 250 GHz. An 8×1 phased-array transmitter is implemented, demonstrating a main lobe scanning range of ±12° in the $E$ -plane.
- 3 February 2026
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 61 (4) , 1294-1307
Open AccessA 52 Gb/s 8.9-dBm EIRP 300-GHz-Band Amplifier-Last Outphasing Transmitter With Path Mismatch Calibration in 65-nm CMOS
This article presents a 300-GHz-band amplifier-last outphasing phased-array transmitter with path mismatch calibration in a 65-nm CMOS technology. Calibration is essential for mitigating impairments in outphasing systems used for wideband communication. The transmitter integrates two independent sub-THz LO generation chains to calibrate the phase mismatch between two paths and configure the phase delay between different phased-array elements. An integrated RF outphasing amplifier calibrates the amplitude mismatch and improves the transmitter’s effective isotropic radiated power (EIRP). After calibration, the transmitter exhibits a 3.3-dB improvement in error vector magnitude and supports 16 QAM modulation at 52 Gb/s over a distance of 9 cm. It achieves a peak EIRP of 8.9 dBm at 246 GHz, with a minimum EIRP of 5.0 dBm across the frequency range from 237 to 250 GHz. An 8×1 phased-array transmitter is implemented, demonstrating a main lobe scanning range of ±12° in the $E$ -plane.
- Open Access
- 1 January 2026
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 61 (8) , 1-18
A 300-GHz-Band 16.2-dBm EIRP Four-Element Amplifier-Last Phased-Array Transmitter With On-Chip Vivaldi Antenna in 65-nm CMOS
- 1 January 2026
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 61 (8) , 1-18
Open AccessA 300-GHz-Band 16.2-dBm EIRP Four-Element Amplifier-Last Phased-Array Transmitter With On-Chip Vivaldi Antenna in 65-nm CMOS
- 11 August 2025
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Solid-State Circuits Letters
- Vol. 8, 241-244
A 160-Gb/s D-Band Bi-Directional CMOS Mixer Covering 112–170 GHz for 6G Transceivers
This work presents a D-band bi-directional CMOS double-balanced mixer (DBM) supporting data rates over 160 Gb/s with a 58-GHz RF bandwidth (112–170 GHz). The mixer employs four identical NMOS passive switches ($12~\mu $ m/60 nm) in a DBM topology, providing the isolation between RF, LO, and IF ports. Both IF and RF are bi-directional, enabling up conversion and down conversion. The proposed mixer is fabricated in a 65-nm CMOS process with an integrated LO-driver amplifier. LO amplifier has a 9.5-dB simulated gain and an 8-dBm saturated output power. The total area, including RF and DC pads is 0.7749 mm2. The measurement result shows a −12.5-dB conversion gain in both directions with differential signals and a 3-dB extra loss in a single-ended configuration.$\mathrm { OP_{1dB}}$ is −13.5 dBm for up conversion and −5.5 dBm for down conversion. In modulated signal measurements, the mixer handles a 40-GHz bandwidth OFDM 16-QAM signal centered at 135 GHz, demonstrating a 160-Gb/s data rate in both up conversion and down conversion.- 11 August 2025
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Solid-State Circuits Letters
- Vol. 8, 241-244
A 160-Gb/s D-Band Bi-Directional CMOS Mixer Covering 112–170 GHz for 6G Transceivers
This work presents a D-band bi-directional CMOS double-balanced mixer (DBM) supporting data rates over 160 Gb/s with a 58-GHz RF bandwidth (112–170 GHz). The mixer employs four identical NMOS passive switches ($12~\mu $ m/60 nm) in a DBM topology, providing the isolation between RF, LO, and IF ports. Both IF and RF are bi-directional, enabling up conversion and down conversion. The proposed mixer is fabricated in a 65-nm CMOS process with an integrated LO-driver amplifier. LO amplifier has a 9.5-dB simulated gain and an 8-dBm saturated output power. The total area, including RF and DC pads is 0.7749 mm2. The measurement result shows a −12.5-dB conversion gain in both directions with differential signals and a 3-dB extra loss in a single-ended configuration.$\mathrm { OP_{1dB}}$ is −13.5 dBm for up conversion and −5.5 dBm for down conversion. In modulated signal measurements, the mixer handles a 40-GHz bandwidth OFDM 16-QAM signal centered at 135 GHz, demonstrating a 160-Gb/s data rate in both up conversion and down conversion.- Open Access
- 18 June 2025
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 60 (10) , 3566-3576
A Compact D-Band Phase Shifter With 0.1-Degree Phase Resolution and Ultra-Low Phase Error in 65-nm CMOS
This article introduces a compact D-band phase shifter, which achieves high-resolution phase steps and ultra-low phase error, designed for the sixth-generation (6G) mobile network. The proposed design integrates two novel circuit architectures: a feedback fine-tuning phase shifter (FFPS) provides precise phase control with fine 0.1° steps over a 22.5° range by using a feedback transmission line (TL) to enhance gain and tuning range. The second architecture is a two-mode non-uniform propagation delay phase shifter (2-mode NU-PDPS), which enables coarse phase tuning with 22.5° steps, covering a full 360° phase range. It employs non-uniform MOSFET sizing to realize ideal TL operation. In addition, two modes are introduced in the quarter-wave TL to increase phase resolution without increasing area and thus achieves a core area of 0.06 $\text {mm}^{2}$ . The proposed phase shifter operates with 0.1° steps over a 360° fine-tuning range within the frequency range of 150–160 GHz. It achieves an rms phase error of 0.68°, the lowest among reported phase shifters in this frequency range. The total power consumption is 5mW at 1.0-V VDD, with an insertion loss of −2.5dB.
- 18 June 2025
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 60 (10) , 3566-3576
Open AccessA Compact D-Band Phase Shifter With 0.1-Degree Phase Resolution and Ultra-Low Phase Error in 65-nm CMOS
This article introduces a compact D-band phase shifter, which achieves high-resolution phase steps and ultra-low phase error, designed for the sixth-generation (6G) mobile network. The proposed design integrates two novel circuit architectures: a feedback fine-tuning phase shifter (FFPS) provides precise phase control with fine 0.1° steps over a 22.5° range by using a feedback transmission line (TL) to enhance gain and tuning range. The second architecture is a two-mode non-uniform propagation delay phase shifter (2-mode NU-PDPS), which enables coarse phase tuning with 22.5° steps, covering a full 360° phase range. It employs non-uniform MOSFET sizing to realize ideal TL operation. In addition, two modes are introduced in the quarter-wave TL to increase phase resolution without increasing area and thus achieves a core area of 0.06 $\text {mm}^{2}$ . The proposed phase shifter operates with 0.1° steps over a 360° fine-tuning range within the frequency range of 150–160 GHz. It achieves an rms phase error of 0.68°, the lowest among reported phase shifters in this frequency range. The total power consumption is 5mW at 1.0-V VDD, with an insertion loss of −2.5dB.
- 26 April 2024
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Solid-State Circuits Letters
- Vol. 7, 167-170
A D-Band Wideband Single-Ended Neutralized Upconversion Mixer With Controlled LO Feedthrough in 65-nm CMOS
A D-band wideband passive single-ended upconversion mixer with controlled LO feedthrough in 65-nm CMOS process is presented in this letter. The LO feedthrough was controlled by the varactor and the neutralizing transmission line between the LO and RF ports of the mixer. In measurement, the proposed passive single-ended mixer had a conversion gain of −13.0±1.5 dB with an ultrawide 3-dB bandwidth from 110 to 160 GHz. The LO feedthrough suppression was from −38.9 to −24.4 dB at 135 GHz by changing the varactor bias. The measured OP1dB was −12.5 dBm at center frequency. The chip occupies 0.35 mm2, including pads.
- 26 April 2024
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Solid-State Circuits Letters
- Vol. 7, 167-170
A D-Band Wideband Single-Ended Neutralized Upconversion Mixer With Controlled LO Feedthrough in 65-nm CMOS
A D-band wideband passive single-ended upconversion mixer with controlled LO feedthrough in 65-nm CMOS process is presented in this letter. The LO feedthrough was controlled by the varactor and the neutralizing transmission line between the LO and RF ports of the mixer. In measurement, the proposed passive single-ended mixer had a conversion gain of −13.0±1.5 dB with an ultrawide 3-dB bandwidth from 110 to 160 GHz. The LO feedthrough suppression was from −38.9 to −24.4 dB at 135 GHz by changing the varactor bias. The measured OP1dB was −12.5 dBm at center frequency. The chip occupies 0.35 mm2, including pads.
- 11 October 2021
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 57 (6) , 1723-1735
A 12.9-to-15.1-GHz Digital PLL Based on a Bang-Bang Phase Detector With Adaptively Optimized Noise Shaping
This work introduces a bang-bang fractional- $N$ phase-locked loop with quantization noise shaping that overcomes the classical noise limit of a standard bang-bang phase detector. An adaptive algorithm, working in the background of the main system, guarantees optimal noise shaping across process and environmental variations. The prototype, implemented in a standard 28-nm CMOS process, has a core area of 0.21 mm 2 and achieves an rms jitter (integrated from 1 kHz to 100 MHz) of 69.5 fs for integer- $N$ synthesized channels, 79.7 fs for typical fractional- $N$ channels, and 99.6 fs for near-integer fractional channels with a worst case fractional spur of −51.1 dBc. The power consumption is 10.8 mW, leading to a jitter-power figure of merit of −252.8 dB and −251.6 dB for integer- $N$ and fractional- $N$ channels, respectively.
- 11 October 2021
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 57 (6) , 1723-1735
A 12.9-to-15.1-GHz Digital PLL Based on a Bang-Bang Phase Detector With Adaptively Optimized Noise Shaping
This work introduces a bang-bang fractional- $N$ phase-locked loop with quantization noise shaping that overcomes the classical noise limit of a standard bang-bang phase detector. An adaptive algorithm, working in the background of the main system, guarantees optimal noise shaping across process and environmental variations. The prototype, implemented in a standard 28-nm CMOS process, has a core area of 0.21 mm 2 and achieves an rms jitter (integrated from 1 kHz to 100 MHz) of 69.5 fs for integer- $N$ synthesized channels, 79.7 fs for typical fractional- $N$ channels, and 99.6 fs for near-integer fractional channels with a worst case fractional spur of −51.1 dBc. The power consumption is 10.8 mW, leading to a jitter-power figure of merit of −252.8 dB and −251.6 dB for integer- $N$ and fractional- $N$ channels, respectively.