Tae-Ho Kim
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Tae-Ho Kim has a total of 12 co-authors. Here are the top co-authors by number of shared publications:
- Dae-Woo Kim
Department of Materials Science and Engineering, Yonsei University, Seoul 03722, Republic of Korea
1 shared publication Haryeong Choi
1 shared publicationHyunchul Sohn
1 shared publication- Hyunchul Sohn
Department of Materials Science and Engineering, Yonsei University, Seoul 03722, Republic of Korea
1 shared publication - Hyung-Ho Park
Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
1 shared publication - Jaeyeon Kim
Department of Materials Science and Engineering, Yonsei University, Seoul 03722, Republic of Korea
1 shared publication
Latest Publications
- Open Access
- 29 June 2022
- Published by MDPI AG in Nanomaterials
- Vol. 12 (13) , 2231
Reset First Resistive Switching in Ni1−xO Thin Films as Charge Transfer Insulator Deposited by Reactive RF Magnetron Sputtering
Reset-first resistive random access memory (RRAM) devices were demonstrated for off-stoichiometric Ni1−xO thin films deposited using reactive sputtering with a high oxygen partial pressure. The Ni1−xO based RRAM devices exhibited both unipolar and bipolar resistive switching characteristics without an electroforming step. Auger electron spectroscopy showed nickel deficiency in the Ni1−xO films, and X-ray photoemission spectroscopy showed that the Ni3+ valence state in the Ni1−xO films increased with increasing oxygen partial pressure. Conductive atomic force microscopy showed that the conductivity of the Ni1−xO films increased with increasing oxygen partial pressure during deposition, possibly contributing to the reset-first switching of the Ni1−xO films.
- 29 June 2022
- Published by MDPI AG in Nanomaterials
- Vol. 12 (13) , 2231
Open AccessReset First Resistive Switching in Ni1−xO Thin Films as Charge Transfer Insulator Deposited by Reactive RF Magnetron Sputtering
Reset-first resistive random access memory (RRAM) devices were demonstrated for off-stoichiometric Ni1−xO thin films deposited using reactive sputtering with a high oxygen partial pressure. The Ni1−xO based RRAM devices exhibited both unipolar and bipolar resistive switching characteristics without an electroforming step. Auger electron spectroscopy showed nickel deficiency in the Ni1−xO films, and X-ray photoemission spectroscopy showed that the Ni3+ valence state in the Ni1−xO films increased with increasing oxygen partial pressure. Conductive atomic force microscopy showed that the conductivity of the Ni1−xO films increased with increasing oxygen partial pressure during deposition, possibly contributing to the reset-first switching of the Ni1−xO films.
- 2 June 2022
- Published by Elsevier in Applied Materials Today
- Vol. 28
Ultralow dielectric cross-linked silica aerogel nanocomposite films for interconnect technology
- 2 June 2022
- Published by Elsevier in Applied Materials Today
- Vol. 28
Ultralow dielectric cross-linked silica aerogel nanocomposite films for interconnect technology