High-Temperature Stability Analysis of SOI-MOSFETs Characteristics Based on SPTI Model

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Abstract
The electrical performance of high-precision analog and digital circuits in MOSFETs is highly sensitive to temperature changes. Here, by studying the stability of electrical characteristics such as OFF-state leakage current, saturation current, and transconductance efficiency of fully depleted silicon-on-insulator (FDSOI) and partially depleted silicon-on-insulator (PDSOI) in the temperature range of 25 $^{\circ}$ C–300 $^{\circ}$ C, we proposed a new semiconductor-parameter-temperature-increment (SPTI) model. Within this SPTI model, it can clarify the influence of high-temperature electrical parameters, $\alpha_{\textit{T}}$ and $\beta_{\textit{T}}$ , on the stability of the electrical characteristics of FDSOI and PDSOI. Thus, it helps in understanding the differences in the stability of electrical characteristics between the two devices. In addition, the SPTI model can also be used to obtain the design domain of the electrical characteristics for FDSOI and PDSOI. More importantly, a compromise method based on the design parameter $\gamma$ can be obtained to effectively improve the electrical characteristics and the stability of the two devices.
Funding Information
  • Fund of Innovation Center of Radiation Application (KFZC2020020101)

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