Charge deposition analysis of heavy-ion-induced single-event burnout in low-voltage power VDMOSFET
Authors:
- Saulo G. AlbertonSASaulo G. Alberton
- V.A.P. AguiarVAV.A.P. Aguiar
- N.H. MedinaNMN.H. Medina
- N. AddedNAN. Added
- E.L.A. MacchioneEME.L.A. Macchione
- R. MenegassoRMR. Menegasso
- G.J. CesárioGCG.J. Cesário
- H.C. SantosHSH.C. Santos
- V.B. ScarduelliVSV.B. Scarduelli
- J.A. Alcántara-NúñezJAJ.A. Alcántara-Núñez
- M.A. GuazzelliMGM.A. Guazzelli
- R.B.B. SantosRSR.B.B. Santos
- 21 September 2022
- journal article
- research article
- Published by Elsevier in Microelectronics Reliability
- Vol. 137
Abstract
No abstract availableKeywords
Funding Information
- Fundação de Amparo à Pesquisa do Estado de São Paulo (01.12.0224.00, 2012/03383-5)
- Coordenação de Aperfeiçoamento de Pessoal de Nível Superior
- Conselho Nacional de Desenvolvimento Científico e Tecnológico (306353/2018-0, 434609/2018-8)
- FINEP
- Instituto Nacional de Ciência e Tecnologia: Física Nuclear e Aplicações (464898/2014-5)
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