Performance of vertical power devices with contact-level copper metallization
Authors:
- Jeffrey CookJCJeffrey Cook
- Misbahul AzamMAMisbahul Azam
- Pak LeungPLPak Leung
- Melissa GrupenMGMelissa Grupen
- 1 July 1999
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 348 (1-2) , 14-21
Abstract
No abstract availableKeywords
This publication has 21 references indexed in Scilit:
- Electromigration in Submicron Wide Copper LinesMRS Proceedings, 1996
- Activation Energy of Electromigration in Copper Thin Film Conductor LinesMRS Proceedings, 1996
- In-Situ UHV Electromigration In Cu FilmsMRS Proceedings, 1996
- Thermal dry-etching of copper using hydrogen peroxide and hexafluoroacetylacetoneThin Solid Films, 1995
- Alloying of copper for use in microelectronic metallizationMaterials Chemistry and Physics, 1995
- Electromigration in copper conductorsThin Solid Films, 1995
- Encapsulated copper interconnection devices using sidewall barriersThin Solid Films, 1995
- Copper-based metallization and interconnects for ultra-large-scale integration applicationsThin Solid Films, 1995
- Dry Etching Technique for Subquarter‐Micron Copper InterconnectsJournal of the Electrochemical Society, 1995
- High-Reliability Copper Interconnects through Dry Etching ProcessJapanese Journal of Applied Physics, 1995