Low-Power and Reconfigurable Logic-in-Memory (LiM) Based on Complementary FeFET-pFET Technology
- 21 November 2025
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 47 (2) , 285-288
Abstract
Logic-in-Memory (LiM) architecture uses its unique tunable memory states to realize different logic functions within a single cell, greatly improving its area efficiency. In this work, we propose a reconfigurable complementary oxide-based 1FeFET-1pFET (1F1P) LiM cell that supports 14 types of reconfigurable logic operations. Leveraging the complementary characteristics of FeFET and pFET devices, the proposed design achieves a low static power consumption down to 10.97 pW. Array-level Spectre simulation based on the 1F1P structure shows an energy efficiency of 74 TOPS/W for the INT4 MAC in ResNet-20 inference on the CIFAR-10 dataset with peak throughput of 671 GOPS, underscoring the potential of complementary 1F1P for next-generation low-power reconfigurable logic.Keywords
Funding Information
- National Natural Science Foundation of China (62174074)
- National Natural Science Foundation of China (W2532048)
- National Natural Science Foundation of China (62274081)
- Zhujiang Young Talent Program (2021QN02X362)
- Zhujiang Young Talent Program (2023QN10X177)
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