Remote nitrogen microwave plasma chemical vapor deposition from a tetramethyldisilazane precursor. 1. Growth mechanism, structure, and surface morphology of silicon carbonitride films

This publication has 38 references indexed in Scilit:

• The effects of deposition and test conditions on nanomechanical behaviour of ultrathin films produced by plasma-enhanced chemical vapour deposition process at atmospheric pressure
  Thin Solid Films, 2004
• Ion beam-induced chemical vapor deposition with hexamethyldisilane for hydrogenated amorphous silicon carbide and silicon carbonitride films
  Surface and Coatings Technology, 2003
• Stability of Silicon Carbonitride Phases
  Journal of the American Ceramic Society, 2002
• Hard amorphous silicon carbonitride coatings produced by plasma enhanced chemical vapour deposition
  Steel Research, 2001
• Plasma-enhanced chemical vapor deposition of silicon carbonitride using hexamethyldisilazane and nitrogen
  Thin Solid Films, 2000
• Silicon carbonitride, a new hard material and its relation to the confusion about ‘harder than diamond’ C3N4
  Thin Solid Films, 1999
• Silicon carbonitride: a rival to cubic boron nitride
  Diamond and Related Materials, 1998
• A covalent micro/nano-composite resistant to high-temperature oxidation
  Nature, 1995
• High power deposition and analytics of amorphous silicon carbide films
  Thin Solid Films, 1995
• Structure and chemistry of silicon nitride and silicon carbonitride thin films deposited from ethylsilazane in ammonia or hydrogen
  Chemistry of Materials, 1992