The determination of low dose boron implanted concentration profiles in silicon by the (n,α) reaction
Authors:
- K. MüllerKMK. Müller
- R. HenkelmannRHR. Henkelmann
- H. BoroffkaHBH. Boroffka
- 1 November 1975
- journal article
- Published by Elsevier in Nuclear Instruments and Methods
- Vol. 129 (2) , 557-559
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Measurement of the boron distribution in 10B-implanted silicon by the (n,α) nuclear reactionThin Solid Films, 1973
- Alpha-particle stopping cross section of silicon and germaniumJournal of Applied Physics, 1973
- Specific energy loss of 4He ions in silicon (amorphous, polycrystalline, and single crystal)Journal of Applied Physics, 1973
- Technique for determining concentration profiles of boron impurities in substratesJournal of Applied Physics, 1972
- Boron atom distributions in ion-implanted silicon by the (n,4He) nuclear reactionApplied Physics Letters, 1972
- Theoretical Considerations on Lateral Spread of Implanted IonsJapanese Journal of Applied Physics, 1972