Shida Zhang
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Shida Zhang has a total of 17 co-authors. Here are the top co-authors by number of shared publications:
- Saibal Mukhopadhyay
Department of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA
3 shared publications - Wei-Chun Wang
Georgia Institute of Technology, Atlanta, GA, USA
3 shared publications - Isha Chakraborty
Georgia Institute of Technology, Atlanta, GA, USA
2 shared publications - Amol Domaji Gaidhane
Arizona State University, Tempe, AZ, United States
1 shared publication - Arijit Raychowdhury
Georgia Institute of Technology
1 shared publication - Coleman DeLude
School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA
1 shared publication
Latest Publications
- 28 May 2026
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Solid-State Circuits Letters
- Vol. 9, 174-177
A 194.6-TOPS/W Pipelined All Current-Domain Mixed-Signal Compute in Memory in 28-nm CMOS
Mixed-signal CIM faces bit-cell nonlinearity, poor linearity at high frequency, and throughput limits. We present a hybrid pipelined current-domain MS-CIM macro featuring Bit-Cell Matched Linearization Interface (BMLI) and Loop-unrolled SAR ADC fabricated in 28 nm CMOS. A 256×256 SRAM array with 8-bit inputs, 8-bit weights achieve 10.16 TOPS peak throughput, 194.59 TOPS/W compute efficiency, 40.46 TOPS/mm2 density, and maintains RMSE of 4.3% at 300MHz and 5.6% at 620MHz.
- 28 May 2026
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Solid-State Circuits Letters
- Vol. 9, 174-177
A 194.6-TOPS/W Pipelined All Current-Domain Mixed-Signal Compute in Memory in 28-nm CMOS
Mixed-signal CIM faces bit-cell nonlinearity, poor linearity at high frequency, and throughput limits. We present a hybrid pipelined current-domain MS-CIM macro featuring Bit-Cell Matched Linearization Interface (BMLI) and Loop-unrolled SAR ADC fabricated in 28 nm CMOS. A 256×256 SRAM array with 8-bit inputs, 8-bit weights achieve 10.16 TOPS peak throughput, 194.59 TOPS/W compute efficiency, 40.46 TOPS/mm2 density, and maintains RMSE of 4.3% at 300MHz and 5.6% at 620MHz.
- 5 May 2026
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Solid-State Circuits Letters
- Vol. 9, 154-157
A 256-Element Slepian Beamforming Accelerator With Analog Compute-In-Memory Multiplication and Accumulation
An analog compute-in-memory Slepian beamforming accelerator is introduced for large-scale MIMO. The design performs complex-valued vector–matrix multiplication in the analog domain to project 256 I/Q inputs into a low-dimensional Slepian subspace and uses a digital backend with 4-tap FIR filters to generate one output beam. A test chip fabricated in 28 nm CMOS demonstrates a 20.5 dB peak-to-sidelobe ratio over a 280 MHz bandwidth while consuming 414 mW.
- 5 May 2026
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Solid-State Circuits Letters
- Vol. 9, 154-157
A 256-Element Slepian Beamforming Accelerator With Analog Compute-In-Memory Multiplication and Accumulation
An analog compute-in-memory Slepian beamforming accelerator is introduced for large-scale MIMO. The design performs complex-valued vector–matrix multiplication in the analog domain to project 256 I/Q inputs into a low-dimensional Slepian subspace and uses a digital backend with 4-tap FIR filters to generate one output beam. A test chip fabricated in 28 nm CMOS demonstrates a 20.5 dB peak-to-sidelobe ratio over a 280 MHz bandwidth while consuming 414 mW.
- Open Access
- 5 August 2024
- Published by Association for Computing Machinery (ACM)
- p. 1-6
Cryogenic Operation of Computing-In-Memory based Spiking Neural Network
This paper introduces a Computing-In-Memory based Spiking Neural Network (SNN) architecture for cryogenic operation of CMOS (Cryo-SNN). The paper demonstrates design strategies to improve energy efficiency of Cryo-SNN by coupling low-voltage operation at cryogenic temperature with innovative design of neuron circuits optimized for cryogenic conditions. By exploiting the enhanced device characteristics of 14 nm FinFET transistors at cryogenic temperatures, our architecture outlines critical adaptations to SNN components for optimal functionality in extreme environments. The circuit simulation using measurement calibrated 14nm FinFET models shows that a Cryo-SNN designed for MNIST classification operates with 4.54X improved energy-delay-product (EDP) over room temperature operation while maintaining similar accuracy. Further, the paper designs an optimized SNN architecture for autonomous health monitoring of miniaturized satellites at cryogenic temperature consuming less than 1mW of power.
- 5 August 2024
- Published by Association for Computing Machinery (ACM)
- p. 1-6
Open AccessCryogenic Operation of Computing-In-Memory based Spiking Neural Network
This paper introduces a Computing-In-Memory based Spiking Neural Network (SNN) architecture for cryogenic operation of CMOS (Cryo-SNN). The paper demonstrates design strategies to improve energy efficiency of Cryo-SNN by coupling low-voltage operation at cryogenic temperature with innovative design of neuron circuits optimized for cryogenic conditions. By exploiting the enhanced device characteristics of 14 nm FinFET transistors at cryogenic temperatures, our architecture outlines critical adaptations to SNN components for optimal functionality in extreme environments. The circuit simulation using measurement calibrated 14nm FinFET models shows that a Cryo-SNN designed for MNIST classification operates with 4.54X improved energy-delay-product (EDP) over room temperature operation while maintaining similar accuracy. Further, the paper designs an optimized SNN architecture for autonomous health monitoring of miniaturized satellites at cryogenic temperature consuming less than 1mW of power.