Cost-Efficient Bidirectional ESD Protection for 650-V GaN Power HEMT With Co-Packaged Transient Voltage Suppressor
- 5 December 2025
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Device and Materials Reliability
- Vol. 26 (1) , 235-243
Abstract
A cost-efficient electrostatic discharge (ESD) protection solution for the gate-to-source terminal of GaN-based power high-electron-mobility transistors (HEMTs) is proposed. High ESD robustness of the GaN-based power HEMT has been successfully achieved by co-packaging a transient voltage suppressor (TVS) inside the package together, while a 32.6% reduction in cost as comparing to that with on-die bidirectional ESD protection circuit can be gained. Human-body-model (HBM) ESD level exceeding ±7 kV has been verified, indicating the effectiveness of the proposed solution for protecting the gate-to-source terminal of GaN-based power HEMT.Keywords
Funding Information
- National Science and Technology Council (NSTC), Taiwan (NSTC 112-2221-E-A49-147-MY3)
- National Science and Technology Council (NSTC), Taiwan (110-2622-8-009-017-TP1)
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