Physics-Based and Closed-Form Model for Cryo-CMOS Subthreshold Swing
Authors:
- Arnout BeckersABArnout Beckers
- Jakob MichlJMJakob Michl
- Alexander GrillAGAlexander Grill
- Ben KaczerBKBen Kaczer
- Marie Garcia BardonMBMarie Garcia Bardon
- Bertrand ParvaisBPBertrand Parvais
- Bogdan GovoreanuBGBogdan Govoreanu
- Kristiaan De GreveKGKristiaan De Greve
- Gaspard HiblotGHGaspard Hiblot
- Geert HellingsGHGeert Hellings
- 13 September 2023
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nanotechnology
- Vol. 22 (1536125X) , 590-596
Abstract
Cryogenic semiconductor device models are essential in designing control systems for quantum devices and in bench-marking the benefits of cryogenic cooling for high-performance computing. In particular, the saturation of subthreshold swing due to band tails is an important phenomenon to include in low temperature analytical MOSFET models as it predicts theoretical lower bounds on the leakage power and supply voltage in tailored cryogenic CMOS technologies with tuned threshold voltages. Previous physics-based modeling required to evaluate functions with no closed-form solutions, defeating the purpose of fast and efficient model evaluation. Thus far, only the empirically proposed expressions are in closed form. This article bridges this gap by deriving a physics-based and closed-form model for the full saturating trend of the subthreshold swing from room down to low temperature. The proposed model is compared against experimental data taken on some long and short devices from a commercial 28-nm bulk CMOS technology down to 4.2KKeywords
All Related Versions
This publication has 25 references indexed in Scilit:
- A Review on Quantum Computing: From Qubits to Front-end Electronics and Cryogenic MOSFET Physics2019
- Cryogenic Subthreshold Swing Saturation in FD-SOI MOSFETs Described With Band BroadeningIEEE Electron Device Letters, 2019
- Cryogenic Temperature Characterization of a 28-nm FD-SOI Dedicated Structure for Advanced CMOS and Quantum Technologies Co-IntegrationIEEE Journal of the Electron Devices Society, 2018
- Characterization and Modeling of 28-nm Bulk CMOS Technology Down to 4.2 KIEEE Journal of the Electron Devices Society, 2018
- Probing band-tail states in silicon metal-oxide-semiconductor heterostructures with electron spin resonanceApplied Physics Letters, 2012
- Compact and Distributed Modeling of Cryogenic Bulk MOSFET OperationIEEE Transactions on Electron Devices, 2010
- Ultra low-EOT (5 Å) gate-first and gate-last high performance CMOS achieved by gate-electrode optimization2009
- Device scaling limits of Si MOSFETs and their application dependenciesProceedings of the IEEE, 2001
- Simple derivation of exponential tails in the density of statesPhysical Review B, 1988
- Attojoule MOSFET logic devices using low voltage swings and low temperatureSolid-State Electronics, 1985